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On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD8796


25V 35A 88W 5.7mO@10V,35A N Channel TO-252 MOSFETs ROHS
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USD 0.5244

Multiples of: 1

35 A25 V4.5 mOhmsn - channel  - 55 C+ 175 C88 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
NVMFS5C442NAFT1G


MOSFET T6-D3F 40V NFET
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USD 0.5246

Multiples of: 1

140 A40 V1.9 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel10 V32 nCEnhancementAec - Q101 
NTTFS5811NLTAG


MOSFET Single N-CH 40V 53A
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USD 0.5251

Multiples of: 1

53 A40 V5.5 mOhmsn - channel 1.7 V- 55 C+ 150 C2.7 w , 33 Wsmd/smtWDFN - 8Reel   31 nC   
FDS8842NZ


MOSFET 40V NCh PowerTrench w/MOSFET
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USD 0.5256

Multiples of: 2500

14.9 A40 V7 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V enhancement powertrench
CPH6328-TL-E


Trans MOSFET P-CH 100V 1.6A 6-Pin CPH T/R
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USD 0.5279

Multiples of: 822

1.6 A  p    1.6 Wsurface mount Tape And Reel    enhancement  
NDF04N60ZG-001


MOSFET NFET TO220FP 600V 4.
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USD 0.5279

Multiples of: 822

4.8 A600 V1.8 Ohmsn - channel 3 V- 55 C+ 150 C30 Wthrough holeTO - 220FP - 3Tubesi1 channel30 V29 nCenhancement  
NID9N05BCLT4G


MOSFET 9 A, 52 V, N-CHANNEL, LOGIC LEVEL CLAMPED MOSFET W/ESD PROTECTION
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USD 0.5299

Multiples of: 1

           Cut Tape       
NVMJS2D5N06CLTWG


MOSFET N-Channel 60V 164A 8-Pin LFPAK T/R
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USD 0.5303

Multiples of: 3000

31 A60 V2.4 mOhmsN - Channel 2 V- 55 C+ 175 C113 WSmd/SmtLFPAK - 8Cut TapeSi1 Channel20 V52 nCEnhancementAec - Q101 
FDD24AN06LA0_F085


Fairchild Semiconductor MOSFET 60V, 36A, N Chan Logic Lvl PowerTrnch
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USD 0.531

Multiples of: 1

7.1 A60 V19 mOhmsn - channel20 V - 55 C+ 175 C75 Wsmd/smtDPAK - 2Reelsi1 channel20 V enhancement  
FQP2N40_F080


Fairchild Semiconductor MOSFET N-CH 400V 1.8A 5.8OHM
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USD 0.5327

Multiples of: 1

         through holeTO - 220 - 3Tubesi      
FDMS8020


MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET
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USD 0.5336

Multiples of: 3000

26 A30 V2.5 mOhmsn - channel   + 150 C65 Wsmd/smtPOWER 56Reelsi     powertrench
NVMFS6H848NLT1G


MOSFET T8 80V LL SO8FL
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USD 0.5353

Multiples of: 1

57 A80 V9.4 mOhmsN - Channel 4 V- 55 C+ 175 C73 WSMD/SMTDFN - 5Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V16 nCEnhancementAEC - Q101 
NVMFD5875NLT1G


MOSFET NFET SO8FL 60V 22A 3
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USD 0.5357

Multiples of: 1500

22 A60 V27 mOhms , 27 mOhmsn - channel 1 V- 55 C+ 175 C32 Wsmd/smtDFN - 8Cut Tapesi2 channel20 V20 nC , 20 nCenhancementaec - q101 
MTD6N15T4GV


TRANS MOSFET N-CH 150V 6A 3-PIN(2+TAB) DPAK T/R
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USD 0.5361

Multiples of: 1

                   
NVMFS5C646NLWFT1G


ON Semiconductor MOSFET NFET SO8FL 60V 92A 4.7MOH
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USD 0.5366

Multiples of: 1500

         smd/smtSO - FL - 8Reelsi    aec - q101 
NTMFS5C673NT1G


60V 50A 8.9mΩ@10V,7A 46W 4V@35uA N Channel DFN-5(5.9x4.9) MOSFETs ROHS
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USD 0.5372

Multiples of: 1

                   
FDMS7578


MOSFET 25V 28A 5.8mOhm N-Ch PowerTrench
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USD 0.5382

Multiples of: 1

28 A25 V5.8 mOhmsn - channel 1.6 V- 55 C+ 150 C33 Wsmd/smtPOWER - 33Reelsi1 channel    powertrench
FQD5N50CTM_WS


MOSFET Power MOSFET, N-Channel, QFET , 500 V, 4 A, 1.4 O, DPAK
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USD 0.5385

Multiples of: 1

         smd/smtI - PAK - 3Reelsi      
NVMFS6H852NT1G


MOSFET TRENCH 8 80V NFET
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ON Semiconductor Availability : 0
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USD 0.5385

Multiples of: 1

43 A80 V14.2 mOhmsN - Channel 2 V- 55 C+ 175 C54 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V13 nCEnhancementAec - Q101 
FQU12N20TU


Fairchild Semiconductor MOSFET 200V N-Channel QFET
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USD 0.5395

Multiples of: 1

9 A200 V280 mOhmsn - channel  - 55 C+ 150 C2.5 Wthrough holeIPAK - 3Tubesi1 channel30 V enhancement  
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