About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS2672_F085


Fairchild Semiconductor MOSFET 200V3.9A 70OHMNCH ULTRAFET TRENCH
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USD 1.0573

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3.9 A200 V59 mOhmsn - channel20 V - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8Reelsi1 channel20 V33 nC  ultrafet
FCPF600N65S3R0L-F154


MOSFET SUPERFET3 650V TO220F PKG
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USD 1.0578

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6 A650 V600 mOhmsN - Channel 4.5 V- 55 C+ 150 C24 WThrough Hole  Si1 Channel- 30 V , + 30 V11 nCEnhancement  
NVMFS6B14NT1G


MOSFET NFET SO8FL 100V 15A
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USD 1.0588

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         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
ATP208-TL-H


Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) ATPAK T/R
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USD 1.0611

Multiples of: 1

           Tape And Reel    enhancement  
NTB35N15T4G


N-Channel 150 V 37A (Ta) 2W (Ta), 178W (Tj) Surface Mount D²PAK
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USD 1.0622

Multiples of: 1

37 A150 V50 mOhmsn - channel  - 55 C+ 150 C178 Wsmd/smtD2PAKReelsi1 channel20 V enhancement  
FDMQ8203


MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
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USD 1.0653

Multiples of: 1

6 A100 v , 80 V110 mOhms , 190 mOhmsn and p - channel 3 v , 1.6 V + 125 C2.5 Wsmd/smtMLPReelsi2 channel20 V2.9 nC , 13 nC  powertrench
FDMC86520L


MOSFET 60V N-Chnl Pwr Trench MOSFET
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USD 1.0663

Multiples of: 1

13.5 A60 V6.5 mOhmsn - channel 1.7 V  2.3 Wsmd/smtMLP - 8Reelsi1 channel20 V45 nC   
NTMFS2D1N08XT1G


MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A
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USD 1.0718

Multiples of: 1

201 A80 V1.9 mOhmsN - Channel 3.6 V- 55 C+ 175 C164 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
SFT1342-TL-E


MOSFET SWITCHING DEVICE
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USD 1.075

Multiples of: 1

                   
NTMFD5C650NLT1G


MOSFET T6 60V LL S08FL DS
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USD 1.0785

Multiples of: 1

111 A60 V4.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V37 nCEnhancement  
NVMFS5C442NWFAFT1G


MOSFET T6-D3F 40V NFET
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USD 1.0792

Multiples of: 1

140 A40 V1.9 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel10 V32 nCEnhancementAec - Q101 
FQB7P20TM_F085


MOSFET 200V P-Channel QFET
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USD 1.08

Multiples of: 1

- 7.3 A- 200 V690 mOhmsp - channel     smd/smtTO - 252 - 3Reelsi1 channel     
FDS6912


Fairchild Semiconductor MOSFET SO-8 DUAL N-CH 30V
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USD 1.083

Multiples of: 401

6 A30 V24 mOhmsn - channel25 V - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReelsi2 channel25 V enhancement powertrench
NDS8435A


MOSFET Single P-Ch FET Enhancement Mode
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USD 1.083

Multiples of: 401

- 7.9 A- 30 V20 mOhmsp - channel20 V - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReel    enhancement  
ATP405-TL-H


N-Channel 100 V 40A (Ta) 70W (Tc) Surface Mount ATPAK
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USD 1.0832

Multiples of: 1

40 A100 V25 mOhmsn - channel   + 150 C70 Wsmd/smtDPAK - 3Reelsi1 channel20 V    
NTD4808N-1G


MOSFET NFET 30V 63A 8MOHM
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USD 1.0838

Multiples of: 1

12 A30 V8 mOhmsN - Channel  - 55 C+ 175 C2 WSmd/SmtIPAK - 3TubeSi1 Channel20 V Enhancement  
NDS356AP


Transistor: P-MOSFET; unipolar; -20V; -1.1A; 0.5W; SuperSOT-3
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USD 1.0847

Multiples of: 1

                   
NTMFS4H01NT1G


MOSFET N Trench 25V 54A 2.1V @ 250uA 700 mΩ @ 30A,10V SO8-FL RoHS
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USD 1.0887

Multiples of: 1500

                   
FDMS86182


MOSFET PTNG 10020V Nch Power Trench MOSFET
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USD 1.0899

Multiples of: 1

           Cut Tape       
FDMS8670S


MOSFET 30V N-Channel PowerTrench SyncFET
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USD 1.0906

Multiples of: 398

42 A30 V3.5 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtPOWER 56Reelsi1 channel20 V enhancement powertrench syncfet
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