About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SJ661-1E


MOSFET PCH 4V DRIVE SERIES
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USD 2.0125

Multiples of: 1

38 A60 V29.5 mOhmsp - channel   + 150 C65 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V80 nCenhancement  
2SK3747-1E


MOSFET NCH 10V DRIVE SERIES
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USD 2.0132

Multiples of: 1

   n - channel     through holeTO - 3PF        
FQA36P15


Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
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USD 2.014

Multiples of: 1

            qfet®      
2SK3818-DL-E


2SK3818-DL-E
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USD 2.0164

Multiples of: 1

                   
MTP2P50EG


MOSFET 500V 2A P-Channel
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USD 2.0316

Multiples of: 1

2 A- 500 V6 Ohmsp - channel20 V - 55 C+ 150 C75 Wthrough holeTO - 220 - 3Tube    enhancement  
FDA16N50-F109


MOSFET 500V 16.5A NCH
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USD 2.0333

Multiples of: 5

16.5 A500 V380 mOhmsN - Channel  - 55 C+ 150 C205 WThrough HoleTO - 3PN - 3 Si1 Channel30 V Enhancement Unifet
2SK4066-DL-1E


ON Semiconductor MOSFET
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USD 2.0418

Multiples of: 1

100 A60 V4.7 mOhmsn - channel     through holeTO - 262 - 3Reelsi1 channel     
FDBL9401_F085


MOSFET TO-leadless, PT8,40V 300A, 0.76mOhm
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USD 2.0447

Multiples of: 3

300 A40 V0.65 mOhmsn - channel20 V4 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V220 nCenhancement powertrench
MTP50P03HDLG


MOSFET PFET T0220 30V 50A 25mOhm
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USD 2.0514

Multiples of: 1

50 A- 30 V25 mOhmsp - channel15 V - 55 C+ 175 C125 Wthrough holeTO - 220 - 3Tube    enhancement  
FDP2710_F085


Fairchild Semiconductor MOSFET 250V NCHAN PwrTrench
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USD 2.0592

Multiples of: 1

50 A250 V38 mOhmsn - channel  - 55 C+ 150 C403 Wthrough holeTO - 220 - 3Tube       
FDP5500_F085


Fairchild Semiconductor MOSFET 55V NCHAN UltraFET
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USD 2.0616

Multiples of: 1

80 A55 V5.1 mOhmsn - channel  - 55 C+ 175 C375 Wthrough holeTO - 220 - 3Tube 1 channel     
NVMFS5C404NT1G


MOSFET NFET SO8FL 40V 345A 8MO
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USD 2.0622

Multiples of: 1

378 A40 V700 uOhmsn - channel 2 V- 55 C+ 175 C200 Wsmd/smtDFN - 5Reelsi +/- 20 V128 nCenhancementaec - q101 
NVB6411ANT4G


MOSFET NFET D2PAK 100V 75A 16MO
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USD 2.0652

Multiples of: 211

77 A100 V14 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi    Aec - Q101 
FCP11N60N


MOSFET SupreMOS 11A
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USD 2.0826

Multiples of: 209

   n - channel  - 55 C+ 150 C   Tube       
2SK4122LS


Trans MOSFET N-CH 450V 15.5A 3-Pin(3+Tab) TO-220FI
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USD 2.0867

Multiples of: 1

                   
FCPF16N60NT


MOSFET SupreMOS 16A
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USD 2.0955

Multiples of: 1000

16 A600 V170 mOhmsn - channel  - 55 C+ 150 C357 Wthrough holeTO - 220FTubesi1 channel30 V enhancement supremos
FDS6672A


MOSFET SO-8 N-CH 30V
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USD 2.0956

Multiples of: 218

                   
FDBL0330N80


Fairchild Semiconductor MOSFET TO-leadless MV7 80V
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USD 2.1031

Multiples of: 3

220 A80 V6.1 mOhmsn - channel 2 V- 55 C+ 175 C300 Wsmd/smtMO - 299A - 8Reelsi1 channel+/- 20 V86 nCenhancement powertrench
NTMFS0D8N02P1ET1G


MOSFET FET 25V 0.8 MOHM SO8FL
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USD 2.105

Multiples of: 1

365 A25 V680 uOhmsN - Channel 2 V- 55 C+ 150 C139 WSMD/SMTDFN - 5Cut Tape , ReelSi1 Channel- 12 V , + 16 V52 nCEnhancement  
NTMFS5C612NT1G-TE


N-Channel 60V 35A (Ta), 230A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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USD 2.1126

Multiples of: 1500

235 A60 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C3.8 WSMD/SMTSO - 8FL Si1 Channel- 20 V , + 20 V91 nCEnhancement  
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