About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDBL86361_F085


Fairchild Semiconductor MOSFET
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USD 3.12

Multiples of: 1

300 A80 V3.1 mOhmsn - channel20 V2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V172 nCenhancement powertrench
NTMTS0D6N04CTXG


MOSFET T6 40V SG PQFN8*8 EXPANSI
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USD 3.12

Multiples of: 1

533 A40 V480 uOhmsN - Channel 2 V- 55 C+ 175 C245 WSmd/SmtPOWER88 - 8Cut TapeSi1 Channel20 V187 nCEnhancement  
FQA90N15


MOSFET 150V N-Channel QFET
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USD 3.1338

Multiples of: 1

90 A150 V18 mOhmsn - channel  - 55 C+ 175 C375 Wthrough holeTO - 3PNTubesi1 channel25 V enhancement qfet
NTP011N15MC


N-Channel 150V 9.8A (Ta), 74.3A (Tc) 2.4W (Ta), 136.4W (Tc) Through Hole TO-220-3
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USD 3.1465

Multiples of: 1

74.3 A150 V10.9 mOhmsN - Channel 4.5 V- 55 C+ 175 C136.4 WSMD/SMT  Si1 Channel- 20 V , + 20 V37 nCEnhancement  
FDB86363-F085


Trans MOSFET N-CH 80V 110A 3-Pin TO-263 T/R
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USD 3.181

Multiples of: 800

110 A80 V2 mOhmsN - Channel 3 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V131 nC Aec - Q101Powertrench
NVMFS6H818NLT1G


MOSFET MOSFET - Power Single N-Channel 80 V 3.2mO 135 A - NVMFS6H818NL DFN5 Pb-Free
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USD 3.242

Multiples of: 1

           Cut Tape       
NTHL082N65S3F


MOSFET SUPERFET3 650V TO247 N-CHANNEL
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USD 3.2601

Multiples of: 1

40 A650 V70 mOhmsN - Channel 3 V- 55 C+ 150 C313 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V81 nCEnhancement Superfet Iii
FDP8440


MOSFET 40V N-Channel Power Trench
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USD 3.2816

Multiples of: 1

277 A40 V2.2 mOhmsn - channel  - 55 C+ 175 C306 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
FCI25N60N_F102


MOSFET 600V N-CHAN SupreMOS
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USD 3.3106

Multiples of: 1

25 A600 V107 mOhmsn - channel    216 Wthrough holeTO - 262 - 3Bulksi1 channel     
FCB20N60_F085


MOSFET 600V, 20A, SUPERFET
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USD 3.328

Multiples of: 1

20 A600 V198 mOhmsN - Channel30 V4 V- 55 C+ 150 C341 WSmd/SmtD2PAK - 2ReelSi1 Channel30 V72 nC  Superfet
FCA20N60


Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
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USD 3.346

Multiples of: 1

                   
NTHL095N65S3HF


MOSFET SUPERFET3 650V FRFET 95MO
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USD 3.355

Multiples of: 1

36 A650 V95 mOhmsN - Channel 3 V- 55 C+ 150 C272 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V66 nCEnhancement Superfet Iii
FDI025N06


MOSFET 60V N-Channel PowerTrench
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USD 3.3727

Multiples of: 50

265 A60 V2.5 mOhmsn - channel20 V - 55 C+ 175 C395 Wthrough holeI2PAK - 3Tube    enhancement  
WPH4003-1E


N-Channel 1700 V 2.5A (Tc) 3W (Ta), 55W (Tc) Through Hole TO-3PF
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USD 3.3978

Multiples of: 1

3 A1700 V8.2 Ohmsn - channel30 V   55 Wthrough holeTO - 3P - 3Tubesi1 channel30 V48 nC   
NVMFSC0D9N04CL


N-Channel Power MOSFET DUAL COOL 40V 316A 0.85mOhm 8-Pin PQFN Surface Mount T/R
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USD 3.4127

Multiples of: 3000

           Cut Tape       
FDB075N15A_F085


MOSFET N-Channel Power Trench MOSFET 150V, 110A, 7.5m
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USD 3.4206

Multiples of: 1

110 A150 V20 mOhmsn - channel 4 V- 55 C+ 175 C333 Wsmd/smtD2PAK - 2Reelsi1 channel 95 nC  powertrench
NVMTSC1D3N08M7TXG


MOSFET PT7 80V DC PQFN8*8 EXPANSION
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USD 3.4619

Multiples of: 1

           Cut Tape       
FDB2532_F085


Fairchild Semiconductor MOSFET 150V N-Channel PowerTrench MOSFET
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USD 3.4791

Multiples of: 800

79 A150 V14 mOhmsn - channel20 V4 V  310 Wsmd/smtD2PAK - 3Reelsi1 channel20 V82 nC  powertrench
FCP110N65F


MOSFET SuperFET2 650V, 110mohm
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USD 3.5075

Multiples of: 800

35 A650 V110 mOhmsn - channel20 v , 30 V5 V- 55 C+ 150 C357 Wthrough holeTO - 220 - 3Tubesi1 channel20 v , 30 V98 nCenhancement superfet ii frfet
FDBL0150N60


Fairchild Semiconductor MOSFET Update code D
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USD 3.5131

Multiples of: 1

240 A60 V2.9 mOhmsn - channel 2 V- 55 C+ 175 C357 Wsmd/smtMO - 299A - 8Reelsi1 channel+/- 20 V130 nCenhancement powertrench
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