About MOSFETs

MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTA7002NT1G


MOSFET NFET SC75 30V 154MA 7OHM
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ON Semiconductor Availability : 811789
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USD 0.0529

Multiples of: 1

154 mA30 V1.4 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSC - 75ReelSi1 Channel10 V  Aec - Q101 
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 RoHS
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Youtai Availability : 782955
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USD 0.0175

Multiples of: 20

                   
BSH205G2AR


P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB
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Nexperia Availability : 747520
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USD 0.0632

Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Digi - Reel®Mosfet (Metal Oxide)      
DMG6602SVT-7


MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
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Diodes Incorporated Availability : 736230
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USD 0.0651

Multiples of: 3000

3.4 A , 2.8 A30 V100 mOhms , 140 mOhmsN - Channel, P - Channel  - 55 C+ 150 C840 mWSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V9 nCEnhancement  
SI2371EDS-T1-GE3


Vishay Semiconductors MOSFET -30V 45mOhm10V -4.8A P-Ch G-III
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Vishay Availability : 729444
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USD 0.0701

Multiples of: 1

- 4.8 A- 30 V45 mOhmsP - Channel - 0.6 v to - 1.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V10.6 nCEnhancement Trenchfet Power Mosfet
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon Availability : 723753
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USD 0.0506

Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
BSS138-13-F


50V 200mA 300mW 3.5O@10V,220mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 722008
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USD 0.0276

Multiples of: 1

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V-Enhancement  
BSS123NH6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
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Infineon Availability : 700496
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USD 0.0483

Multiples of: 1

            Optimos      
T2N7002BK,LM(T


Transistor: N-MOSFET; unipolar; 60V; 400mA; 320mW; SOT23
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Toshiba Availability : 698400
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USD 0.0182

Multiples of: 3000

                   
BSS131H6327XTSA1


Infineon Technologies MOSFET N-Ch 240V 100mA SOT-23-3
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Infineon Availability : 686760
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USD 0.063

Multiples of: 3000

         Smd/SmtSOT - 23 - 3Reel       
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