About MOSFETs

MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIA431DJ-T1-GE3


MOSFET 20V 12A 19W 25mohm @ 4.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 93972
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USD 0.215

Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SC - 70 - 6LReel       
2N7002 TR13


MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
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Central Semiconductor Availability : 93742
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USD 0.1037

Multiples of: 1

   N - Channel     Smd/SmtSOT - 23Cut TapeSi1 Channel     
SI1016CX-T1-GE3


MOSFET 20V .5/.35A PCH COMPLIMENTARY
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Vishay Availability : 93631
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USD 0.1104

Multiples of: 1

350 mA , 500 mA20 V396 mOhms , 756 mOhmsN And P - Channel 400 mV- 55 C+ 150 C220 mW , 220 mWSmd/SmtSC - 89 - 6 (SOT563 - 6)ReelSi2 Channel- 4.5 v , 4.5 V1.3 nC , 1.65 nCEnhancement Trenchfet
BSS123K-TP


MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) Availability : 93120
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USD 0.0286

Multiples of: 3000

           Cut Tape       
SSM3K376R,LF


MOSFET LowON Res MOSFET ID=4A VDSS=30V
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Toshiba Availability : 93120
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USD 0.059

Multiples of: 3000

4 A30 V56 mOhmsN - Channel 400 mV + 150 C1 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel12 v , - 8 V2.2 nCEnhancement  
2N7002E-T1-GE3


MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
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Vishay Availability : 93120
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USD 0.0965

Multiples of: 3000

240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V0.6 nCEnhancement  
IRLHS2242TRPBF


P-Channel 20 V 7.2A (Ta), 15A (Tc) 2.1W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2)
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Infineon Availability : 93120
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USD 0.1087

Multiples of: 4000

15 A20 V31 mOhmsP - Channel    9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V12 nC   
FDB2532


Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
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ON Semiconductor Availability : 93120
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USD 2.132

Multiples of: 800

            Powertrench®      
RZR020P01TL


ROHM Semiconductor MOSFET 1.5V DRVE PCH MOSFET
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ROHM Availability : 92942
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USD 0.1908

Multiples of: 1

2 A- 12 V75 mOhmsP - Channel10 V - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel10 V6.5 nCEnhancement  
BSP125H6327XTSA1


Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
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Infineon Availability : 92150
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USD 0.299

Multiples of: 1000

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