About MOSFETs

MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RU1J002YNTCL


ROHM Semiconductor MOSFET
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ROHM Availability : 188943
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USD 0.0253

Multiples of: 1

200 mA50 V2.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3ReelSi1 Channel4.5 V Enhancement  
2N7002BKVL


MOSFET 2N7002BK/TO-236AB/REEL 11" Q3/
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Nexperia Availability : 188812
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USD 0.0253

Multiples of: 1

350 mA60 V1 OhmsN - Channel 1.1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancement  
SISS26LDN-T1-GE3


MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
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Vishay Availability : 188047
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USD 0.5049

Multiples of: 1

81.2 A60 V4.3 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V48 nCEnhancement Trenchfet, Powerpak
BSS84PH6327XTSA2


Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; SOT23
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Infineon Availability : 187505
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USD 0.0363

Multiples of: 1

   P Channel               
SI2302CDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay Availability : 187272
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USD 0.1331

Multiples of: 1

2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23
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Diotec Availability : 185988
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USD 0.0196

Multiples of: 1

                   
PMZ1000UN,315


MOSFET MOSFET N-CH
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Nexperia Availability : 184300
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USD 0.0605

Multiples of: 1

480 mA30 V1 Ohmsn - channel     smd/smtSOT - 883 - 3Reelsi1 channel     
DMC2700UDM-7


MOSFET MOSFET BVDSS
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Diodes Incorporated Availability : 184197
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USD 0.0506

Multiples of: 1

1.34 A , 1.14 A20 V700 mOhms , 1.3 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C1.12 WSmd/SmtSOT - 26 - 6Cut TapeSi2 Channel6 V736.6 pCEnhancement  
SQ2325ES-T1_GE3


MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified
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Vishay Availability : 182827
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USD 0.2343

Multiples of: 1

840 mA150 V1.3 OhmsP - Channel 3.5 V- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V10 nCEnhancementAec - Q101Trenchfet
DMN65D8L-7


MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA
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Diodes Incorporated Availability : 182614
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USD 0.0165

Multiples of: 1

310 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.87 nCEnhancement  
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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Shikues Availability : 182089
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USD 0.0106

Multiples of: 20

                   
SI2319DS-T1-E3


MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
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Vishay Availability : 182078
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USD 0.2607

Multiples of: 1

3.0 A40 V82 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V17 nCEnhancement Trenchfet
SQ1912EH-T1_GE3


MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified
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Vishay Availability : 180347
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USD 0.1067

Multiples of: 1

800 mA , 800 mA20 v , 20 V200 mOhms , 200 mOhmsN - Channel 450 mV , 450 mV- 55 C+ 175 C1.5 WSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel12 v , 12 V1.15 nC , 1.15 nCEnhancementAec - Q101Trenchfet
2N7002K


MOSFET N Trench 60V 300mA 2.5V @ 250uA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Hottech Availability : 178449
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USD 0.0071

Multiples of: 50

                   
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT-23 RoHS
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Bourne Availability : 177569
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USD 0.0276

Multiples of: 10

                   
BVSS138LT1G


ON Semiconductor MOSFET NFET 50V 200MA 3.5O
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ON Semiconductor Availability : 177510
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USD 0.0512

Multiples of: 3000

200 mA50 V5.6 Ohmsn - channel20 V1.5 V- 55 C+ 150 C225 mWsmd/smtSOT - 23 - 3Reel       
STD12NF06T4


Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
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STMicroelectronics Availability : 177025
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USD 0.2986

Multiples of: 2500

            Supermesh      
SI5457DC-T1-GE3


Vishay Semiconductors MOSFET 20V 6A 5.7W
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Vishay Availability : 175808
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USD 0.1683

Multiples of: 1

- 6 A- 20 V46 mOhmsP - Channel12 V- 1.4 V- 55 C+ 150 C5.7 WSmd/SmtCHIP - FET - 8ReelSi  25 nC  Trenchfet
SQ1431EH-T1_GE3


MOSFET 30V 3A 3W AEC-Q101 Qualified
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Vishay Availability : 175546
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USD 0.1784

Multiples of: 1

- 3 A- 30 V175 mOhmsP - Channel 2 V- 55 C+ 175 C3 WSmd/SmtSC - 70 - 6ReelSi1 Channel20 V4.2 nCEnhancementAec - Q101Trenchfet
IRLML2030TRPBF


MOSFET N Trench 30V 2.7A 2.3V @ 25uA 100 mΩ @ 2.7A,10V SOT-23 (SOT-23-3) RoHS
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Infineon Availability : 64020
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USD 0.0673

Multiples of: 3000

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