About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT3030ALGC11


SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
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ROHM Availability : 307
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USD 25.3409

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms22 V5.6 V104 nC- 55 C+ 175 C262 WEnhancement  
IMZA120R040M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 303
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USD 10.1113

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A39 mOhms- 10 V , + 23 V4.2 V39 nC- 55 C+ 150 C227 WEnhancement  
G2R50MT33K


SiC MOSFETs 3300V 50mohm TO-247-4 G2R SiC MOSFET
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GeneSiC Semiconductor Availability : 298
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USD 328.4032

Multiples of: 1

Through Hole N - Channel1 Channel3.3 kV63 A - 5 V , + 20 V3.5 V340 nC- 55 C+ 175 C536 WEnhancement  
G3R45MT17D


SiC MOSFETs 1700V 45mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 291
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USD 29.9428

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV52 A45 mOhms- 5 V , + 15 V2.7 V106 nC- 55 C+ 175 C364 WEnhancement  
SCT3080ARC14


SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 290
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USD 14.736

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A80 mOhms- 4 V , + 22 V5.6 V48 nC- 55 C+ 175 C134 WEnhancement  
C3M0280090J


SiC MOSFETs G3 SiC MOSFET 900V, 280 mOhm
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Wolfspeed Availability : 286
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USD 4.7725

Multiples of: 1

Smd/Smt N - Channel1 Channel900 V11 A385 mOhms- 8 v , + 18 V1.8 V9.5 nC- 55 C+ 150 C50 WEnhancement  
MSC360SMA120B


SiC MOSFETs MOSFET SIC 1200 V 360 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 286
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USD 5.7965

Multiples of: 1

Through Hole N - Channel 1.2 kV 360 mOhms         
Hot C3M0016120D


SiC MOSFETs 1.2kV 15mOHMS G3 SiC MOSFET
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Wolfspeed Availability : 285
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USD 72.9764

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV115 A22.3 mOhms- 8 V , + 19 V1.8 V207 nC- 40 C+ 175 C556 WEnhancement  
Hot SCT3040KLGC11


SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
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ROHM Availability : 282
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USD 19.9325

Multiples of: 1

Through Hole N - Channel1 Channel1200 V55 A40 mOhms- 4 v , 22 V2.7 V107 nC- 55 C+ 175 C262 WEnhancement  
Hot IMZA65R057M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 273
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USD 5.2919

Multiples of: 1

Through Hole N - Channel1 Channel650 V35 A74 mOhms- 5 V , + 23 V5.7 V28 nC- 55 C+ 175 C133 WEnhancement  
IMW65R083M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 272
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USD 4.623

Multiples of: 1

Through Hole N - Channel1 Channel650 V24 A111 mOhms- 5 V , + 23 V5.7 V19 nC- 55 C+ 175 C104 WEnhancement  
NTH4L013N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 272
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USD 26.1486

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV151 A20 mOhms- 10 V , + 22 V4.4 V254 nC- 55 C+ 175 C682 WEnhancement EliteSiC
IMZ120R350M1HXKSA1


N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
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Infineon Availability : 264
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USD 3.9947

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV4.7 A350 mOhms- 7 V , + 23 V5.7 V5.3 nC- 55 C+ 150 C60 WEnhancement CoolSiC
C3M0045065K


SiC MOSFETs 650V MOSFET 45mOHMS SiC MOSFET
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Wolfspeed Availability : 264
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USD 16.2088

Multiples of: 1

Through Hole N - Channel1 Channel650 V49 A45 mOhms- 8 V , + 19 V3.6 V63 nC- 40 C+ 175 C176 WEnhancement  
Hot MSC060SMA070B4


SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-247-4
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Microchip Availability : 261
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USD 8.1767

Multiples of: 1

Through Hole N - Channel1 Channel700 V39 A75 mOhms- 10 V , + 23 V1.9 V56 nC- 55 C+ 175 C143 WEnhancement  
IMZ120R220M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 258
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USD 4.5401

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV13 A220 mOhms- 7 V , + 23 V5.7 V8.5 nC- 55 C+ 150 C75 WEnhancement CoolSiC
C3M0120100K


SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-247-4
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Wolfspeed Availability : 258
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USD 11.3045

Multiples of: 1

Through Hole N - Channel1 Channel1 kV22 A120 mOhms- 4 v , 15 V1.8 V21.5 nC- 55 C+ 150 C83 WEnhancement  
IMW65R040M2HXKSA1


SiC MOSFETs Y
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Infineon Availability : 254
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USD 6.9144

Multiples of: 1

Through Hole N - Channel1 Channel650 V46 A49 mOhms- 7 V , + 23 V5.6 V28 nC- 55 C+ 175 C172 WEnhancement CoolSiC
MSC080SMA120B4


SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 253
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USD 8.5229

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV37 A80 mOhms- 10 V , + 23 V2.8 V64 nC- 55 C+ 175 C200 WEnhancement  
IMW65R050M2HXKSA1


SiC MOSFETs Y
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Infineon Availability : 250
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USD 5.863

Multiples of: 1

Through Hole N - Channel1 Channel650 V38 A62 mOhms- 7 V , + 23 V5.6 V22 nC- 55 C+ 175 C153 WEnhancement CoolSiC
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