About SiC MOSFETs

SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
Hot SCT3040KLGC11


SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
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ROHM Availability : 440
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USD 29.062

Multiples of: 1

Through Hole N - Channel1 Channel1200 V55 A40 mOhms- 4 v , 22 V2.7 V107 nC- 55 C+ 175 C262 WEnhancement  
MSC400SMA330B4


SiC MOSFETs MOSFET SIC 3300 V 400 mOhm TO-247-4
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Microchip Availability : 336
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USD 27.489

Multiples of: 1

Through Hole N - Channel1 Channel3.3 kV11 A400 mOhms- 10 V , + 23 V2.97 V37 nC- 55 C+ 150 C131 WEnhancement  
IMZ120R220M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 326
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USD 3.3

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV13 A220 mOhms- 7 V , + 23 V5.7 V8.5 nC- 55 C+ 150 C75 WEnhancement CoolSiC
SCT3080KLHRC11


SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
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ROHM Availability : 323
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USD 17.5

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A80 mOhms- 4 V , + 22 V2.7 V60 nC- 55 C+ 175 C165 WEnhancementAEC - Q101 
G3R20MT12N


SiC MOSFETs 1200V 20mohm SOT-227 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 321
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USD 49.566

Multiples of: 1

Screw Mount N - Channel1 Channel1.2 kV93 A20 mOhms- 5 V , + 15 V2.7 V180 nC- 55 C+ 175 C338 WEnhancement  
SCT3160KLGC11


SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
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ROHM Availability : 315
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USD 3.9338

Multiples of: 1

Through Hole N - Channel1 Channel1200 V17 A160 mOhms- 4 v , 22 V2.7 V42 nC- 55 C+ 175 C103 WEnhancement  
GC3M0075120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 307
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USD 4.024

Multiples of: 1

                
NSF080120L3A0Q


SiC MOSFETs TO247 1.2KV 36A N-CH SIC
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Nexperia Availability : 307
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USD 7.5537

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A120 mOhms- 10 V , + 22 V2.9 V44 nC- 55 C+ 175 C202 WEnhancement  
SCT3030ALGC11


SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
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ROHM Availability : 307
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USD 23.0715

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms22 V5.6 V104 nC- 55 C+ 175 C262 WEnhancement  
Hot SCT3040KRC14


SiC MOSFETs TO247 1.2KV 55A N-CH SIC
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ROHM Availability : 305
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USD 25.25

Multiples of: 1

Through Hole N - Channel1 Channel1200 V55 A52 mOhms- 4 v to 22 V5.6 V107 nC- 55 C+ 175 C262 WEnhancement  
MSC040SMA120B


SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 303
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USD 20.735

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV62 A50 mOhms- 10 V , + 25 V1.8 V140 nC- 55 C+ 175 C311 WEnhancement  
SCT3080ARC14


SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 290
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USD 13.4163

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A80 mOhms- 4 V , + 22 V5.6 V48 nC- 55 C+ 175 C134 WEnhancement  
SCT4036KRHRC15


SiC MOSFETs TO247 1.2KV 43A N-CH SIC
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ROHM Availability : 287
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USD 13.057

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV43 A36 mOhms- 4 V , + 21 V4.8 V91 nC + 175 C176 WEnhancement  
Hot C3M0016120D


SiC MOSFETs 1.2kV 15mOHMS G3 SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 283
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USD 62.375

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV115 A22.3 mOhms- 8 V , + 19 V1.8 V207 nC- 40 C+ 175 C556 WEnhancement  
C2M0280120D


SiC MOSFETs SIC MOSFET 1200V RDS ON 280 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 279
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USD 5.7

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A280 mOhms- 10 V , + 25 V2.8 V5.6 nC- 55 C+ 150 C62.5 WEnhancement Z - FET
IMW65R083M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 272
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USD 4.209

Multiples of: 1

Through Hole N - Channel1 Channel650 V24 A111 mOhms- 5 V , + 23 V5.7 V19 nC- 55 C+ 175 C104 WEnhancement  
NTH4L013N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 272
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USD 23.8069

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV151 A20 mOhms- 10 V , + 22 V4.4 V254 nC- 55 C+ 175 C682 WEnhancement EliteSiC
C3M0120100J


SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-263-7
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Wolfspeed Availability : 258
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USD 10.659

Multiples of: 1

Smd/Smt N - Channel1 Channel1 kV22 A120 mOhms15 v , - 4 V1.8 V21.5 nC- 55 C+ 150 C83 WEnhancement  
Hot C3M0015065K


SiC MOSFETs SiC, MOSFET, 15mohm, 650V, TO-247-4, Industrial
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Wolfspeed Availability : 6
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USD 24.6661

Multiples of: 1

Through Hole N - Channel1 Channel650 V120 A15 mOhms- 4 V , + 15 V3.6 V188 nC- 40 C+ 175 C416 WEnhancement  
SCT20N120


SiC MOSFETs 1200V silicon carbide MOSFET
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STMicroelectronics Availability : 3
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USD 4.5708

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancement HiP247
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