PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs PTFA091201E designed for ultra-linear GSM/EDGE power amplifier applications in Package H-36248-2 the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon s advanced LDMOS process, these PTFA091201F devices provide excellent thermal performance and superior Package H-37248-2 reliability. Features EDGE Modulation Spectrum Performance V = 28 V, I = 750 mA, = 959.8 MHz DD DQ Thermally-enhanced packages Broadband internal matching Typical EDGE performance 0 55 - Average output power = 50 W -10 50 - Gain = 19.0 dB Efficiency -20 45 - Efficiency = 44% -30 40 Typical CW performance - Output power at P1dB = 135 W -40 35 - Gain = 18.0 dB -50 30 - Efficiency = 64% 400 kHz -60 25 Integrated ESD protection: Human Body Model, -70 20 Class 2 (minimum) -80 15 Pb-free and RoHS compliant 600 kHz Excellent thermal stability, low HCI drift -90 10 36 38 40 42 44 46 48 50 Capable of handling 10:1 VSWR 28 V, 120W(CW) output power Output Power, Avg. (dBm) RF Characteristics EDGE Measurements (not subject to production testverified by design/characterization in Infineon test fixture) V = 28 V, I = 750 mA, P = 50 W, = 959.8 MHz DD DQ OUT Characteristic Symbol Min Typ Max Unit Error Vector Magnitude EVM (RMS) 2.5 % Modulation Spectrum 400 kHz ACPR 62 dBc Modulation Spectrum 600 kHz ACPR 74 dBc Gain G 19 dB ps Drain Efficiency 44 % D All published data at T = 25C unless otherwise indicated CASE *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive deviceobserve handling precautions Data Sheet 1 of 10 Rev. 03.1, 20016-06-21 Modulation Spectrum (dBc) Drain Efficiency (%)