Product Technical OrOrdderer Folder Support NowNow InterFET 2N3458-59-60 2N3458, 2N3459, 2N3460 N-Channel JFET Features TO-18 Bottom View InterFET N0016H Geometry Gate/Case 3 InterFET N0032H Geometry (2N3458) Low Noise: 5 nV/Hz Typical Drain 2 High Gain: 7.5mS Typical (2N3458) Low Cutoff Voltage: 2N3460 < 1.8V Source 1 RoHS Compliant SMT, TH, and Bare Die Package options. SOT23 Top View Applications General Purpose Amplifiers Source 1 Description Gate 3 The -50V InterFET 2N3458, 2N3459, and 2N3460 Drain 2 are targeted for sensitive amplifier stages for mid- frequencies designs. Gate leakages are typically less than 10pA at room temperatures. The TO-92 Bottom View 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for Gate 3 military applications. Drain 2 Source 1 Product Summary Parameters 2N3458 Min 2N3459 Min 2N3460 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 -50 V IDSS Drain to Source Saturation Current 3 0.8 0.2 mA V Gate to Source Cutoff Voltage -7.8 (Max) -3.4 (Max) -1.8 (Max) V GS(off) G Forward Transconductance 2.5 1.5 0.8 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N3458 2N3459 2N3460 Through-Hole TO-18 Bulk PN3458 PN3459 PN3460 Through-Hole TO-92 Bulk SMP3458 SMP3459 SMP3460 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP3458TR SMP3459TR SMP3460TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel Chip Orientated Tray 2N3458COT 2N3459COT 2N3460COT (COT Waffle Pack) COT 400/Waffle Pack Chip Face-up Tray 2N3458CFT 2N3459CFT 2N3460CFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35093.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N3458-59-60 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 1.7 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N3458 2N3459 2N3460 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -50 -50 -50 V Breakdown Voltage Gate to Source IGSS VGS = -30V, VDS = 0V -1 -1 -1 nA Reverse Current Gate to Source VGS(OFF) VDS = 20V, ID = 1nA -7.8 -3.4 -1.8 V Cutoff Voltage Drain to Source V = 20V, V = 0V DS GS IDSS 3 15 0.8 4 0.2 1 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N3458 2N3459 2N3460 Parameters Conditions Min Max Min Max Min Max Unit Forward GFS VDS = -20V, VGS = 0V, f = 1kHz 2.5 10 1.5 6 0.8 4.5 mS Transconductance 18 18 18 pF C Input Capacitance V = 0V, V = ( ), f = 1MHz iss DS GS (10) (8) (4) V Reverse Transfer C V = 30V, I = 5mA, f = 1MHz 5 5 5 pF rss DS D Capacitance 2N3458-9-60 2 of 5 InterFET Corporation Document Number: IF35093.R00 www.InterFET.com December, 2018