Product Technical OrOrdderer Folder Support NowNow InterFET IFN3957-8 IFN3957, IFN3958 Dual Matched N-Channel JFET TO-71 Bottom View Features Source InterFET N0016H Geometry 5 Drain 6 Typical Noise: 6 nV/Hz Low Ciss: 3.5pF Typical Gate 3 7 Gate High Input Impedance Replacement for 2N3957,8 Parts 2 Drain RoHS Compliant 1 Source SMT, TH, and Bare Die Package options. SOIC8 Top View Applications Differential Amplifiers Gate 1 8 Gate Low Noise Pre-Amplifier Drain 2 7 Source High Impedance Amplifier Source 3 6 Drain Description Gate 4 Gate 5 The -50V InterFET IFN3957 and IFN3958 matched pair JFETs are targeted for high input impedance applications for mid to high frequency designs. Gate leakages are typically 10pA at room temperatures. Parts are matched down to 5mV. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN3957 Min IFN3958 Min Unit BV Gate to Source Breakdown Voltage -50 -50 V GSS I Drain to Source Saturation Current 0.5 0.5 mA DSS VGS(off) Gate to Source Cutoff Voltage -1 -1 V GFS Forward Transconductance 1000 1000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN3957 IFN3958 Through-Hole TO-72 Bulk SMP3957 SMP3958 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMP3957TR SMP3958TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN3957COT IFN3958COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFN3957CFT IFN3958CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35009.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN3957-8 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 250 mW D P Power Derating 4.3 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 175 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN3957, IFN3958 Parameters Conditions Min Typ Max Unit Gate to Source V I = -1A,V = 0V -50 V (BR)GSS G DS Breakdown Voltage Gate to Source VGS = -30V, VDS = 0V, TA = 25C -100 pA I GSS Reverse Current VGS = -30V, VDS = 0V, TA = 125C -500 nA VDS = 20V, ID = 200A, TA = 25C -50 pA I Gate Operating Current G VDS = 20V, ID = 200A, TA = 125C -250 nA Gate to Source V V = -20V, I = 1nA -1 -4.5 V GS(OFF) DS G Cutoff Voltage V = 20V, I = 50A -4.2 DS D V Gate Source Voltage V GS VDS = 20V, ID = 200A -0.5 -4 Gate Source Forward V V = 0V, I = 1mA 2 GS(F) DS G Voltage Drain to Source V = 20V, V = 0V DS GS I 0.5 5 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN3957, IFN3958 Parameters Conditions Min Typ Max Unit Forward V = 10V, V = 0V, f = 1kHz 1000 3000 DS GS GFS S Transconductance V = 20V, V = 0V, f = 200MHz 1000 DS GS G Output Conductance V = 20V, f = 1kHz 35 S OS DS Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz 4 pF Crss Reverse Capacitance VDS = 20V, VGS = 0V, f = 1MHz 1.2 pF NF Noise Figure V = 20V, f = 10Hz, R = 10M 0.5 dB DS G Differential Gate I I VDS = 20V, ID = 200A, TA = 125C 10 nA G1 G2 Current Saturation Drain IFN3957 0.90 1 IDSS1/IDSS2 VDS = 20V, VGS = 0V Current Ratio IFN3958 0.85 1 Differential Gate IFN3957 20 V V GS1 GS2 VDS = 20V, ID = 200A mV Source Voltage IFN3958 25 Differential Gate V V VDS = 20V, ID = 200A IFN3957 5 GS1 GS2 Source Voltage with mV/C T TO = -55C to 125C IFN3958 5 Temperature Transconductance V = 20V, I = 200A, IFN3957 0.90 1 DS D g /g fs1 fs2 Ratio f = 1kHz IFN3958 0.85 1 IFN3957-8 2 of 4 InterFET Corporation Document Number: IF35009.R00 www.InterFET.com December, 2018