Product Technical OrOrdderer Folder Support NowNow InterFET 2N4091-2-3 2N4091, 2N4092, 2N4093 N-Channel JFET Features TO-18 Bottom View InterFET N0132S Geometry Gate/Case 3 Low Noise: 1.2 nV/Hz Typical Fast Switching Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Low RDS(ON) SOT23 Top View Low Leakage Fast Switching Source 1 Gate Description 3 The -40V InterFET 2N4091, 2N4092, and 2N4093 Drain 2 JFETs are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room TO-92 Bottom View temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N4091 Min 2N4092 Min 2N4093 Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS I Drain to Source Saturation Current 30 15 8 mA DSS VGS(off) Gate to Source Cutoff Voltage -5 -2 -1 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4091 2N4092 2N4093 Through-Hole TO-18 Bulk PN4091 PN4092 PN4093 Through-Hole TO-92 Bulk SMP4091 SMP4092 SMP4093 Surface Mount SOT23 Bulk SMP4091TR SMP4092TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4093TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4091COT 2N4092COT 2N4093COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N4091CFT 2N4092CFT 2N4093CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35059.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4091-2-3 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 1800 mW D P Power Derating 12 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4091 2N4092 2N4093 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -40 -40 -40 V Breakdown Voltage Gate to Source IGSS VGS = -20V, VDS = 0V -1 -1 -1 nA Reverse Current Gate to Source VGS(OFF) VDS = 20V, ID = 1nA -5 -10 -2 -7 -1 -5 V Cutoff Voltage Drain to Source V = 0V, V = 20V GS DS IDSS 30 15 8 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4091 2N4092 2N4093 Parameters Conditions Min Max Min Max Min Max Unit Drain to Source V = 0V, I = 0A, GS D RDS(ON) 30 50 80 ON Resistance f = 1kHz VDS = 20V, VGS = 0V, C Input Capacitance 16 16 16 pF iss f = 1MHz Reverse Transfer VDS = 0V, VGS = -20V, C 5 5 5 pF rss Capacitance f = 1MHz td Turn-On Delay Time VDD = 3V, VGS(ON) = 0V 10 15 20 ns tr Rise Time VDD = 3V, VGS(ON) = 0V 10 20 40 ns t Turn-Off Time V = 3V,V = 0V 40 60 80 ns off DD GS(ON) 2N4091-2-3 2 of 5 InterFET Corporation Document Number: IF35059.R00 www.InterFET.com December, 2018