Product Technical OrOrdderer Folder Support NowNow InterFET 2N4222-A 2N4222, 2N4222A N-Channel JFET TO-72 Bottom View Features InterFET N0032H Geometry Gate 3 Typical Noise: 7 nV/Hz Low Ciss: 6.0pF Typical Drain 4 Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Mixers SOT23 Top View Oscillators VHF Amplifiers Source 1 Small Signal Amplifiers Gate 3 Description Drain 2 The -50V InterFET 2N4222 and 2N4222A are targeted for sensitive amplifier stages for mid- frequencies designs. The A variants are TO-92 Bottom View screened for lower noise. The TO-72 package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N4222 Min 2N4222A Min Unit BV Gate to Source Breakdown Voltage -30 -30 V GSS I Drain to Source Saturation Current 5 5 mA DSS VGS(off) Gate to Source Cutoff Voltage V GFS Forward Transconductance 2500 2500 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4222 2N4222A Through-Hole TO-72 Bulk PN4222 PN4222A Through-Hole TO-92 Bulk SMP4222 SMP4222A Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4222TR SMP4222ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4222COT 2N4222ACOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N4222CFT 2N4222ACFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35038.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4222-A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -30 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4222 2N4222A Parameters Conditions Min Max Min Max Unit Gate to Source Breakdown V(BR)GSS VDS = 0V, IG = -1A -30 -30 V Voltage Gate to Source V = -15V, V = 0V, T = 25C -0.1 -0.1 nA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -0.1 -0.1 A GS DS A -2 -6 -2 -6 V VGS Gate Source Voltage VDS = 15V, ID = ( ) (500) (500) (500) (500) A Gate to Source VGS(OFF) VDS = 15V, ID = 0.1nA -8 -8 V Cutoff Voltage Drain to Source Saturation V = 0V, V = 15V GS DS IDSS 5 15 5 15 mA Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4222 2N4222A Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 15V, VGS = 0V, f = 1kHz 2500 6000 2500 6000 S Transconductance Output G V = 15V, V = 0V, f = 1kHz 40 40 S OS DS GS Conductance C Input Capacitance V = 15V, V = 0V, f = 1MHz 6 6 pF iss DS GS Reverse Transfer Crss VDS = 15V, VGS = 0V, f = 1MHz 2 2 pF Capacitance V = 15V, V = 0V, f = 1kHz DS GS Noise Figure 2.5 dB NF R = 1 M G 2N4222-A 2 of 5 InterFET Corporation Document Number: IF35038.R00 www.InterFET.com December, 2018