Product Technical OrOrdderer Folder Support NowNow InterFET 2N4340-1 2N4340, 2N4341 N-Channel JFET Features TO-18 Bottom View InterFET N0016SH Geometry Gate/Case 3 Low Noise: 4.2 nV/Hz Typical High Gain: 3.1mS Typical (2N4341) Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Audio Amplifiers SOT23 Top View Small Signal Amplifier Ultrahigh Impedance Pre-Amplifier Source 1 Voltage Controlled Resistor Current Limiters and Regulators Gate 3 Drain 2 Description The -50V InterFET 2N4340 and 2N4341 are targeted for sensitive amplifier stages for mid- TO-92 Bottom View frequencies designs. Gate leakages are typically less than 10pA at room temperatures. The TO-18 package is hermetically sealed and suitable for Gate 3 military applications. Drain 2 Source 1 Product Summary Parameters 2N4340 Min 2N4341 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 V I Drain to Source Saturation Current 1.2 3 mA DSS V Gate to Source Cutoff Voltage -1 -2 V GS(off) GFS Forward Transconductance 1300 2000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4340 2N4341 Through-Hole TO-18 Bulk PN4340 PN4341 Through-Hole TO-92 Bulk SMP4340 SMP4341 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4340TR SMP4341TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4340COT 2N4341COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N4340CFT 2N4341CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35011.R01Product Technical OrOrdderer Folder Support NowNow InterFET 2N4340-1 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 175 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4340 2N4341 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -50 -50 V Breakdown Voltage Gate to Source V = -30V, V = 0V, T = 25C -0.1 -0.1 GS DS A IGSS nA Reverse Current V = -30V, V = 0V, T = 150C -100 -100 GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 0.1A -1 -3 -2 -6 V Cutoff Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 1.2 3.6 3 9 mA Saturation Current (Pulsed) 0.05 0.07 nA ID(OFF) Drain Cutoff Current VDS = 15V, VGS = ( ) (-5) (-10) V Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4340 2N4341 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 15V, VGS = 0V, f = 1kHz 1300 3000 2000 4000 S Transconductance Output GOS VDS = 15V, VGS = 0V, f = 1kHz 30 60 S Conductance Drain to Source RDS(ON) VGS = 0V, ID = 0A, f = 1kHz 1500 800 ON Resistance Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 7 7 pF Reverse Transfer Crss VDS = 15V, VGS = 0V, f = 1MHz 3 3 pF Capacitance V = 15V, V = 0V, f = 1kHz DS GS Noise Figure 1 1 dB NF R = 1 M, BW = 200 Hz G 2N4340-1 2 of 7 InterFET Corporation Document Number: IF35011.R01 www.InterFET.com November, 2019