X-On Electronics has gained recognition as a prominent supplier of 2N4391 JFET across the USA, India, Europe, Australia, and various other global locations. 2N4391 JFET are a product manufactured by InterFET. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2N4391 InterFET

2N4391 electronic component of InterFET
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Part No.2N4391
Manufacturer: InterFET
Category: JFET
Description: JFET N-Ch -40V JFET 50mA 1.8W 12mW -100V Igss
Datasheet: 2N4391 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.506 ea
Line Total: USD 11.51 
Availability - 106
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
106
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 11.506
10 : USD 10.263
25 : USD 10.142
50 : USD 9.592
100 : USD 9.119
250 : USD 8.833
500 : USD 8.404
1000 : USD 8.03
2500 : USD 7.711

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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We are delighted to provide the 2N4391 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4391 and other electronic components in the JFET category and beyond.

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Product Technical OrOrdderer Folder Support NowNow InterFET 2N4391-2-3 2N4391, 2N4392, 2N4393 N-Channel JFET Features TO-18 Bottom View InterFET N0132S Geometry Gate/Case 3 Low Noise: 1.2 nV/Hz Typical Fast Switching Drain 2 Low Cutoff Voltage: 2N4393 < 3.0V RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Low On Resistance Analog Switches Choppers Source 1 Commutators Gate 3 Description Drain 2 The -40V InterFET 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA TO-92 Bottom View at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-18 package is hermetically Gate 3 sealed and suitable for military applications. Drain 2 Source 1 Product Summary Parameters 2N4391 Min 2N4392 Min 2N4393 Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS I Drain to Source Saturation Current 50 25 5 mA DSS VGS(off) Gate to Source Cutoff Voltage -4 -2 -0.5 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4391 2N4392 2N4393 Through-Hole TO-18 Bulk PN4391 PN4392 PN4393 Through-Hole TO-92 Bulk SMP4391 SMP4392 SMP4393 Surface Mount SOT23 Bulk SMP4391TR SMP4392TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4393TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4391COT 2N4392COT 2N4393COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N4391CFT 2N4392CFT 2N4393CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35060.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4391-2-3 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 1800 mW D P Power Derating 12 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4391 2N4392 2N4393 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V V = 0V, I = -1A -40 -40 -40 V (BR)GSS DS G Breakdown Voltage Gate to Source VDS = -20V, VGS = 0V, TA = 25C -100 -100 -100 pA I GSS Reverse Current VDS = -20V, VGS = 0V, TA = 150C -200 -200 -200 nA Gate to Source V V = 20V, I = 1nA -4 -10 -2 -5 -0.5 -3 V GS(OFF) DS D Cutoff Voltage Gate to Source V V = 0V, I = 1mA 1 1 1 V GS(F) DS G Forward Voltage Drain to Source VGS = 0V, VDS = 20V I 50 150 25 75 5 30 mA DSS Saturation Current (Pulsed) VDS = 20V, VGS = -5V, TA = 25C 100 pA VDS = 20V, VGS = -5V, TA = 150C 200 nA V = 20V, V = -7V, T = 25C 100 pA DS GS A I Drain Cutoff Current D(OFF) VDS = 20V, VGS = -7V, TA = 150C 200 nA V = 20V, V = -12V, T = 25C 100 pA DS GS A VDS = 20V, VGS = -12V, TA = 150C 200 nA V = 0V, I = 3mA 0.4 GS D Drain to Source V V = 0V, I = 6mA 0.4 V DS(ON) GS D ON Voltage VGS = 0V, ID = 12mA 0.4 Static Drain to Source R V = 0V, I = 1mA 30 60 100 DS(ON) GS D ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4391 2N4392 2N4393 Parameters Conditions Min Max Min Max Min Max Unit Drain to Source RDS(ON) VGS = 0V, ID = 0A, f = 1kHz 30 60 100 ON Resistance Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz 14 14 14 pF V = 0V, V = -5V, f = 1MHz 3.5 DS GS Reverse Transfer Crss VDS = 0V, VGS = -7V, f = 1MHz 3.5 pF Capacitance VDS = 0V, VGS = -12V, f = 1MHz 3.5 t Turn-On Delay Time V = 10V, V = 0V 15 15 15 ns d DD GS(ON) tr Rise Time VDD = 10V, VGS(ON) = 0V 5 5 5 ns t Turn-Off Delay Time V = 10V,V = 0V 20 35 50 ns D(OFF) DD GS(ON) tf Fall Time VDD = 10V,VGS(ON) = 0V 15 20 30 ns 2N4391-2-3 2 of 5 InterFET Corporation Document Number: IF35060.R00 www.InterFET.com December, 2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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