Product Technical OrOrdderer Folder Support NowNow InterFET 2N5020-1 2N5020, 2N5021 P-Channel JFET Features TO-18 Bottom View InterFET P0032F Geometry Drain 3 Typical Noise: 10 nV/Hz Low Ciss: 3.2pF Typical Gate/Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Analog Switches SOT23 Top View Choppers Source 1 Description Gate 3 The 25V InterFET 2N5020 and 2N5021 are targeted for data switches and low-level chopper Drain 2 designs. Gate leakages are typically less than 1nA at room temperatures. The TO-18 package is hermetically sealed and suitable for military TO-92 Bottom View applications. Drain 3 Gate 2 Source 1 Product Summary Parameters 2N5020 Min 2N5021 Min Unit BVGSS Gate to Source Breakdown Voltage 25 25 V I Drain to Source Saturation Current -0.3 -1 mA DSS VGS(off) Gate to Source Cutoff Voltage 0.3 0.5 V GFS Forward Transconductance 1000 1500 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N5020 2N5021 Through-Hole TO-18 Bulk PN5020 PN5021 Through-Hole TO-92 Bulk SMP5020 SMP5021 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP5020TR SMP5021TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N5020COT 2N5021COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N5020CFT 2N5021CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35082.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N5020-1 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 25 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 500 mW D P Power Derating 4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N5020 2N5021 Parameters Conditions Min Max Min Max Unit Gate to Source Breakdown V(BR)GSS VDS = 0V, IG = 1A 25 25 V Voltage Gate to Source IGSS VGS = 15V, VDS = 0V 1 1 nA Reverse Current Gate to Source VGS(OFF) VDS = -15V, ID = 1nA 0.3 1.5 0.5 2.5 V Cutoff Voltage Drain to Source Saturation V = 0V, V = -15V GS DS IDSS -0.3 -1.2 -1 -3.5 mA Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N5020 2N5021 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = -15V, VGS = 0V, f = 1kHz 1000 3500 1500 6000 S Transconductance Output G V = -15V, V = 0V, f = 1kHz 20 20 S OS DS GS Conductance C Input Capacitance V = -15V, V = 0V, f = 1MHz 25 25 pF iss DS GS Reverse Transfer Crss VDS = -15V, VGS = 0V, f = 1MHz 7 7 pF Capacitance 2N5020-1 2 of 5 InterFET Corporation Document Number: IF35082.R00 www.InterFET.com December, 2018