Product Technical OrOrdderer Folder Support NowNow InterFET 2N6451-2 2N6451, 2N6452 N-Channel JFET TO-72 Bottom View Features InterFET N0132L Geometry Gate 3 Low Noise: 1.0 nV/Hz Typical High Gain: 15mS Minimum Drain 4 Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Audio Amplifiers SOT23 Top View Low-Noise, High Gain Amplifiers Low-Noise Preamplifiers Source 1 Gate Description 3 The -25V InterFET 2N6451 and 2N6452 are Drain 2 targeted for sensitive amplifier stages for mid- frequencies designs. Gate leakages are typically less than 50pA at room temperatures. The TO-72 TO-92 Bottom View package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N6451 Min 2N6452 Min Unit BVGSS Gate to Source Breakdown Voltage -20 -25 V I Drain to Source Saturation Current 5 5 mA DSS V Gate to Source Cutoff Voltage -0.5 -0.5 V GS(off) GFS Forward Transconductance 15 15 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N6451 2N6452 Through-Hole TO-72 Bulk PN6451 PN6452 Through-Hole TO-92 Bulk SMP6451 SMP6452 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP6451TR SMP6452TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N6451COT 2N6452COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N6451CFT 2N6452CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35054.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N6451-2 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N6451 2N6452 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 -25 V Breakdown Voltage V = -10V, V = 0V, T = 25C -0.1 GS DS A nA Gate to Source VGS = -15V, VDS = 0V, TA = 25C -0.5 I GSS Reverse Current VGS = -10V, VDS = 0V, TA = 125C -0.2 A V = -15V, V = 0V, T = 125C -1 GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 0.5nA -0.5 -3.5 -0.5 -3.5 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 5 20 5 20 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N6451 2N6452 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 10V, ID = 5mA, f = 1kHz 15 30 15 30 mS Transconductance Output GOS VDS = 10V, ID = 5mA, f = 1kHz 50 50 S Conductance Ciss Input Capacitance VDS = 10V, ID = 5mA, f = 1MHz 25 25 pF Reverse Transfer Crss VDS = 10V, ID = 5mA, f = 1MHz 5 5 pF Capacitance Equivalent Circuit V = 10V, I = 5mA, f = 10Hz 5 10 DS D nV/ Hz e n Input Noise Voltage VDS = 10V, ID = 5mA, f = 1kHz 3 8 V = 10V, I = 5mA, f = 10Hz DS D Noise Figure 1.5 2.5 dB NF RG = 10 k 2N6451-2 2 of 5 InterFET Corporation Document Number: IF35054.R00 www.InterFET.com December, 2018