Product Technical OrOrdderer Folder Support NowNow InterFET 2N6550 2N6550 N-Channel JFET Features TO-46 Bottom View InterFET N0450L Geometry Low Noise: 0.9 nV/Hz Typical Gate/Case 3 High Gain: 25mS Minimum Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Low-Noise, High Gain Amplifiers SOT23 Top View Description Source 1 The -20V InterFET 2N6550 is targeted for sensitive Gate 3 amplifier stages for mid-frequencies designs. The 2N6550 has a cutoff voltage of less than 3.0V Drain 2 ideal for low-level power supplies. The TO-46 package is hermetically sealed and suitable for military applications. TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters 2N6550 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V I Drain to Source Saturation Current 10 mA DSS V Gate to Source Cutoff Voltage -0.3 V GS(off) GFS Forward Transconductance 25 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N6550 Through-Hole TO-46 Bulk PN6550 Through-Hole TO-92 Bulk SMP6550 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP6550TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N6550COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N6550CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35068.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N6550 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 400 mW D P Power Derating 2.3 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N6550 Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = 10A -20 V Breakdown Voltage Gate to Source V = -10V, V = 0V, T = 25C -3 nA GS DS A IGSS Reverse Current V = -10V, V = 0V, T = 85C -0.1 A GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 0.1mA -0.3 -3 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 10 100 250 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N6550 Parameters Conditions Min Typ Max Unit Forward GFS VDS = 10V, ID = 10mA, f = 1kHz 25 150 mS Transconductance Output GOS VDS = 10V, ID = 10mA, f = 1kHz 150 S Conductance Ciss Input Capacitance VDS = 10V, ID = 10mA, f = 140kHz 30 35 pF Reverse Transfer Crss VDS = 10V, f = 140kHz 10 20 pF Capacitance Equivalent Input V = 5V, I = 10mA, f = 10Hz 1.4 2 DS D nV/ Hz en Noise Voltage V = 5V, I = 10mA, f = 1kHz 6 10 DS D Equivalent Total VDS = 5V, ID = 10mA, f = 10kHz to 20kHz 0.4 0.6 Vrms en Total Input Noise Voltage Equivalent Input RS < 100 k, f = 1kHz 0.1 pA/Hz in Noise Current 2N6550 2 of 5 InterFET Corporation Document Number: IF35068.R00 www.InterFET.com December, 2018