Product Technical OrOrdderer Folder Support NowNow InterFET IF1320 IF1320 N-Channel JFET TO-72 Bottom View Features InterFET N0132L Geometry Gate 3 Low Noise: 1.0 nV/Hz Typical High Gain: 22mS Typical Drain 4 Case 2 Low Cutoff Voltage: 1.5V Maximum RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Audio Amplifiers Low Noise High Gain Amplifier Drain 1 Gate Description 3 The -20V InterFET IF1320 JFET is targeted for Source 2 sensitive amplifier stages for mid-frequencies designs. The IF1320 has a cutoff voltage of less than 1.5V ideal for low-level power supplies. The TO-72 package is hermetically sealed and suitable for military applications. Product Summary Parameters IF1320 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V I Drain to Source Saturation Current 5 mA DSS VGS(off) Gate to Source Cutoff Voltage -0.35 V G Forward Transconductance 15 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF1320T72 Through-Hole TO-72 Bulk IF1320ST3 Surface Mount SOT23 Bulk 7 Tape and Reel: 1,000 and 3,000 Pieces Minimum 1,000 Pieces IF1320ST3TR 13 Tape and Reel: 9,000 Pieces SOT23 Tape and Reel IF1320COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IF1320CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35056.R02Product Technical OrOrdderer Folder Support NowNow InterFET IF1320 Electrical Characteristics Maximum Ratings ( T = 25C, Unless otherwise specified) A Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V IFG Continuous Forward Gate Current 10 mA PD Continuous Device Power Dissipation 225 mW P Power Derating 1.8 mW/C TJ Operating Junction Temperature -55 to 125 C TSTG Storage Temperature -65 to 200 C Static Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Gate to Source V I = -1A, V = 0V -20 V (BR)GSS G DS Breakdown Voltage Gate to Source I V = 0V, V = -10V -0.1 nA GSS DS GS Reverse Current Gate to Source V V = 10V, I = 0.5 nA -0.35 -1.5 V GS(OFF) DS D Cutoff Voltage Drain to Source VDS = 10V, VGS = 0V I 5 10 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Forward V = 10V, I = 5 mA, DS D GFS 15 22 mS Transconductance f = 1kHz V = 10V, I = 5 mA, DS D Ciss Input Capacitance 20 pF f = 1MHz Reverse Transfer V = 10V, I = 5 mA, DS D Crss 5 pF Capacitance f = 1MHz Equivalent Circuit V = 10V, I = 5 mA, DS D 1.0 nV/ Hz en Input Noise Voltage f = 1kHz IF1320 2 of 6 InterFET Corporation Document Number: IF35056.R02