Product Technical OrOrdderer Folder Support NowNow InterFET IF4500 IF4500 N-Channel JFET TO-72 Bottom View Features InterFET N0450L Geometry Gate 3 Low Noise: 0.9 nV/Hz Typical High Gain: 70mS Typical Drain 4 Case 2 Replacement for IF4510,11 RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Low-Noise, High Gain Amplifiers Drain 1 Description Gate 3 The -20V InterFET IF4500 JFET is targeted for low noise high gain amplifier designs. The IF4500 has a Source 2 cutoff voltage of less than 1.5V ideal for low voltage applications. The TO-72 package is hermetically sealed and suitable for military applications. Product Summary Parameters IF4500 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V IDSS Drain to Source Saturation Current 5 mA V Gate to Source Cutoff Voltage -0.35 V GS(off) G Forward Transconductance 15 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF4500T72 Through-Hole TO-72 Bulk IF4500ST3 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces IF4500ST3TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel IF4500COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IF4500CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35069.R01Product Technical OrOrdderer Folder Support NowNow InterFET IF4500 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 225 mW D P Power Derating 1.8 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 V Breakdown Voltage Gate to Source IGSS VGS = -20V, VDS = 0V -0.1 nA Reverse Current Gate to Source VGS(OFF) VDS = 15V, ID = 0.5nA -0.35 -1.5 V Cutoff Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 5 30 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Forward G V = 15V, I = 5mA, f = 1kHz 15 70 mS FS DS D Transconductance C Input Capacitance V = 15V, V = 0V, f = 1MHz 35 pF iss DS GS Reverse Transfer C V = 15V, V = 0V, f = 1MHz 8 pF rss DS GS Capacitance Equivalent Circuit V = 4V, I = 5mA, f = 1kHz 0.9 DS D nV/ Hz e n Input Noise Voltage IF4500 2 of 6 InterFET Corporation Document Number: IF35069.R01 www.InterFET.com April, 2020