Product Technical OrOrdderer Folder Support NowNow InterFET IFN146 IFN146 Dual Matched N-Channel JFET Features TO-71 Bottom View Source InterFET N0450H Geometry 5 Gate Low Noise: 1.1 nV/Hz Typical 6 High Gain: 30mS Typical Drain 3 7 Drain RoHS Compliant SMT, TH, and Bare Die Package options. 2 Gate 1 Source Applications Low-Noise Audio Amplifier SOIC8 Top View Differential Amplifier Replacement for Japanese 2SK146 Gate 1 8 Gate Drain 2 7 Source Description Source 3 6 Drain The -50V InterFET IFN146 is a low noise high gain Gate 4 Gate replacement for the Japanese 2SK146 JFET. Gate 5 leakages are typically less than 50pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Product Summary Parameters IFN146 Min Unit BVGSS Gate to Source Breakdown Voltage -40 V I Drain to Source Saturation Current 30 (max) mA DSS V Gate to Source Cutoff Voltage -0.3 V GS(off) GFS Forward Transconductance 20 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN146 Through-Hole TO-71 Bulk SMP146 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMP146TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN146COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN146CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35066.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN146 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 375 mW D P Power Derating 3 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN146 Parameters Conditions Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -40 V Breakdown Voltage Gate to Source V = -30V, V = 0V, T = 25C -1 nA GS DS A IGSS Reverse Current V = -30V, V = 0V, T = 150C -1 A GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 1A -0.3 -1.2 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 30 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN146 Parameters Conditions Min Typ Max Unit Forward V = 10V, V = 0V, I = 5mA, DS GS DSS GFS 20 30 mS Transconductance f = 1kHz Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1kHz 75 pF Reverse Transfer C V = 10V, I = 0A, f = 1kHz 15 pF rss DS D Capacitance VDS = 10V, ID = 5mA, RG = 100, Noise Figure 1 dB NF f = 1kHz Differential Gate V V V = 10V, I = 5mA 20 mV GS1 GS2 DS D Source Voltage IFN146 2 of 4 InterFET Corporation Document Number: IF35066.R00 www.InterFET.com December, 2018