Product Technical OrOrdderer Folder Support NowNow InterFET IFN3993-4A IFN3993/A, IFN3994/A P-Channel JFET TO-72 Bottom View Features InterFET P0099F Geometry Gate 3 Typical Noise: 8 nV/Hz Drain Fast Switching 2 4 Case Replacement for 2N3993,4 Parts Source RoHS Compliant 1 SMT, TH, and Bare Die Package options. SOT23 Top View Applications Choppers Source 1 High Speed Commutators Gate 3 Description Drain 2 The 25V InterFET IFN3993/A and IFN3994/A are targeted for choppers and high speed commutator designs. The on resistance is typically TO-92 Bottom View less than 100 Ohms at room temperatures. The TO-72 package is hermetically sealed and suitable Gate 3 for military applications. Drain 2 Source 1 Product Summary (Highlighted values = A variant) Parameters IFN3993/A Min IFN3994/A Min Unit BVGSS Gate to Source Breakdown Voltage 25 25 V I Drain to Source Saturation Current -10 -2 mA DSS V Gate to Source Cutoff Voltage 4 1 V GS(off) 6 4 GFS Forward Transconductance S 7 5 Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN3993 IFN3994 IFN3993A IFN3994A Through-Hole TO-72 Bulk PN3993 PN3994 PN3993A PN3994A Through-Hole TO-92 Bulk SMP3993 SMP3994 SMP3993A SMP3994A Surface Mount SOT23 Bulk SMP3993TR SMP3994TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP3993ATR SMP3994ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel IFN3993COT IFN3994COT IFN3993ACOT IFN3994ACOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN3993CFT IFN3994CFT IFN3993ACFT IFN3994ACFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35084.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN3993-4A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 25 V I Continuous Forward Gate Current -10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) IFN3993/A IFN3994/A Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = 1A 25 25 V Breakdown Voltage Gate to Source VGS(OFF) VDS = -10V, ID = -1A 4 9.5 1 5.5 V Cutoff Voltage Drain to Source V = 0V, V = -10V GS DS IDSS -10 -2 mA Saturation Current (Pulsed) V = -15V, I = 0A, T = 25C nA GS S A IDGO Drain Reverse Current -1.2 -1.2 V = -15V, I = 0A, T = 150C A GS S A -1.2 -1.2 VDS = -10V, VGS = 10V, TA = 25C nA I Drain Cutoff Current D(OFF) V = -10V, V = 10V, T = 150C A DS GS A -1 -1 Dynamic Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) IFN3993/A IFN3994/A Parameters Conditions Min Max Min Max Unit Forward 6 12 4 10 G V = -10V, V = 0V, f = 1kHz mS FS DS GS Transconductance 7 12 5 10 Drain to Source RDS(ON) VGS = 0V, ID = 0A, f = 1kHz 150 300 ON Resistance 16 16 Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1MHz pF 12 12 Reverse Transfer 4.5 5 C V = 0V, V = 10V, f = 1MHz pF rss DS GS Capacitance 3 3.5 IFN3993-4A 2 of 5 InterFET Corporation Document Number: IF35084.R00 www.InterFET.com December, 2018