Product Technical OrOrdderer Folder Support NowNow InterFET IFNU401-2-3 IFNU401, IFNU402, IFNU403 Dual Matched N-Channel JFET Features TO-71 Bottom View Source InterFET N0016H Geometry 5 Drain Low Leakage: 10 pA Typical 6 Low Input Capacitance: 3.5 pF Typical Gate 3 7 Gate High Input Impedance Replacement for U401,2,3 2 Drain RoHS Compliant 1 Source SMT, TH, and Bare Die Package options. SOIC8 Top View Applications Low Noise Differential Amplifier Gate 1 8 Gate Differential Amplifier Drain 2 7 Source JFET Input Op-Amps Source 3 6 Drain Description Gate 4 5 Gate The -50V InterFET IFNU401, IFNU402, and IFNU403 JFETs are targeted for low noise differential amplifier designs. Gate leakages are less than 10pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFNU401 Min IFNU402 Min IFNU403 Min Unit BV Gate to Source Breakdown Voltage -50 -50 -50 V GSS IDSS Drain to Source Saturation Current 0.5 0.5 0.5 mA VGS(off) Gate to Source Cutoff Voltage -0.5 -0.5 -0.5 V G Forward Transconductance 2 2 2 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFNU401 IFNU402 IFNU403 Through-Hole TO-71 Bulk SMPU401 SMPU402 SMPU403 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMPU401 SMPU402 SMPU403 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFNU401COT IFNU402COT IFNU403COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFNU401CFT IFNU402CFT IFNU403CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35098.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFNU401-2-3 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.8 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFNU401, IFNU402, IFNU403 Parameters Conditions Min Typ Max Unit Gate to Source V I = -1A,V = 0V -50 V (BR)GSS G DS Breakdown Voltage Gate to Source I V = -30V, V = 0V -25 pA GSS GS DS Reverse Current VDS = 15V, ID = 200A, TA = 125 C -15 pA I Gate Operating Current G VDS = 15V, ID = 200A, TA = 125 C -10 nA Gate to Source V V = 20V, I = 1nA -0.5 -2.5 V GS(OFF) DS D Cutoff Voltage V Gate Source Voltage V = 20V, I = 200A -0.2 -2.3 V GS DS D Drain to Source V = 20V, V = 0V DS GS I 0.5 10 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFNU401, IFNU402, IFNU403 Parameters Conditions Min Typ Max Unit Forward V = 10V, V = 0V, f = 1kHz 2 7 DS GS GFS mS Transconductance V = 15V, I = 200A, f = 1kHz 1 2 DS D V = 10V, V = 0V, f = 1kHz 20 DS GS GOS Output Conductance S V = 15V, I = 200A, f = 1kHz 2 DS D Ciss Input Capacitance VDS = 15V, ID = 200A, f = 1MHz 8 pF C Reverse Capacitance V = 15V, I = 200A, f = 1MHz 3 pF rss DS D Equivalent Circuit V = 20V, I = 200A, f = 100Hz 20 e DS D nV/ Hz n Input Noise Voltage IFNU401 5 Differential Gate V V GS1 GS2 VDS = 10V, ID = -200A IFNU402 10 mV Source Voltage IFNU403 10 Differential Gate IFNU401 1 V V VDS = 10V, ID = 200A GS1 GS2 Source Voltage with IFNU402 2.5 mV/C T TA = 25C, TB = 85C Temperature IFNU403 4 IFNU401 95 Common Mode VDD = 10V to 20V, CMRR IFNU402 95 dB Rejection Ratio ID = 200A IFNU403 95 IFNU401-2-3 2 of 4 InterFET Corporation Document Number: IF35098.R00 www.InterFET.com December, 2018