Product Technical OrOrdderer Folder Support NowNow InterFET IFN5432-3-4 IFN5432, IFN5433, IFN5434 N-Channel JFET Features TO-52 Bottom View InterFET N0903L Geometry Gate/Case 3 Low Noise: 0.7 nV/Hz Typical High Gain: 200mS Typical Drain 2 Low Rds(on): 5 Ohms Max (IFN5432) RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications Low On Resistance Switches Choppers Description The -25V InterFET IFN5432, IFN5433, and IFN5434 are targeted for Low resistance switches and choppers. The TO-52 package is hermetically sealed and suitable for military applications. Product Summary Parameters IFN5432 Min IFN5433 Min IFN5434 Min Unit BV Gate to Source Breakdown Voltage -25 -25 -25 V GSS IDSS Drain to Source Saturation Current 150 100 30 mA VGS(off) Gate to Source Cutoff Voltage -4 -3 -1 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN5432 IFN5433 IFN5434 Through-Hole TO-52 Bulk IFN5432COT IFN5433COT IFN5343COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN5432CFT IFN5433CFT IFN5434CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35075.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN5432-3-4 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 100 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN5432 IFN5433 IFN5434 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V V = 0V, I = -1A -25 -25 -25 V (BR)GSS DS G Breakdown Voltage Gate to Source VDS = -15V, VGS = 0V, TA = 25C -200 -200 -200 pA I GSS Reverse Current VDS = -15V, VGS = 0V, TA = 150C -200 -200 -200 nA Gate to Source V V = 5V, I = 3nA -4 -10 -3 -9 -1 -4 V GS(OFF) DS D Cutoff Voltage Drain to Source VGS = 0V, VDS = 15V I 150 100 30 mA DSS Saturation Current (Pulsed) VDS = 5V, VGS = -10V, TA = 25C 200 200 200 pA I Drain Cutoff Current D(OFF) VDS = 5V, VGS = -10V, TA = 150C 200 200 200 nA Drain to Source V V = 0V, I = 10mA 50 70 100 mV DS(ON) GS D ON Voltage Static Drain to Source R V = 0V, I = 10mA 2 5 7 10 DS(ON) GS D ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN5432 IFN5433 IFN5434 Parameters Conditions Min Max Min Max Min Max Unit Drain to Source RDS(ON) VGS = 0V, ID = 0A, f = 1kHz 5 7 10 ON Resistance C Input Capacitance V = 0V, V = -10V, f = 1MHz 60 60 60 pF iss DS GS Reverse Transfer C V = 0V, V = -10V, f = 1MHz 20 20 20 pF rss DS GS Capacitance t Turn-On Delay Time 4 4 4 ns d(ON) tr Rise Time 1 1 1 ns VDD = 1.5V, VGS(ON) = 0V, V = -12V, I = 10mA GS(OFF) D(ON) t Turn-Off Delay Time 6 6 6 ns d(OFF) tf Fall Time 30 30 30 ns IFN5432-3-4 2 of 3 InterFET Corporation Document Number: IF35075.R00 www.InterFET.com December, 2018