Product Technical OrOrdderer Folder Support NowNow InterFET IFN6449-50 IFN6449, IFN6450 N-Channel JFET Features TO-39 Bottom View InterFET N0042SY Geometry Gate/Case 3 High Voltage Low Input Capacitance: 3pF Maximum Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications High Voltage Description The -300V InterFET IFN6449 and IFN6450 are targeted for high voltage applications. The TO-39 package is hermetically sealed and suitable for military applications. Product Summary Parameters IFN6449 Min IFN6450 Min Unit BVGSS Gate to Source Breakdown Voltage -100 -100 V I Drain to Source Saturation Current 2 2 mA DSS V Gate to Source Cutoff Voltage -2 -2 V GS(off) GFS Forward Transconductance 0.5 0.5 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN6449 IFN6450 Through-Hole TO-39 Bulk IFN6449COT IFN6450COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN6449CFT IFN6450CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35044.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN6449-50 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Drain Voltage -300 -200 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 800 mW D P Power Derating 6.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN6449 IFN6450 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS IG = -10A, ID = 0A -100 -100 V Breakdown Voltage Gate Drain V(BR)GDO IG = -10A, IS = 0A -300 -200 V Breakdown Voltage Gate to Source V = -80V, V = 0V, T = 25C -100 nA GS DS A IGSS Reverse Current V = -80V, V = 0V, T = 150C -100 A GS DS A Gate to Source VGS(OFF) VDS = 30V, ID = 4nA -2 -15 -2 -15 V Cutoff Voltage Drain to Source V = 0V, V = 30V GS DS IDSS 2 10 2 10 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specIFNied) IFN6449 IFN6450 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 30V, VGS = 0V, f = 1kHz 0.5 3 0.5 3 mS Transconductance Output G V = 30V, V = 0V, f = 1kHz 100 100 S OS DS GS Conductance C Input Capacitance V = 30V, V = 0V, f = 1MHz 3 3 pF iss DS GS Reverse Transfer Crss VDS = 30V, VGS = 0V, f = 1MHz 0.6 0.6 pF Capacitance IFN6449-50 2 of 3 InterFET Corporation Document Number: IF35044.R00 www.InterFET.com December, 2018