Product Technical OrOrdderer Folder Support NowNow InterFET IFD89 IFD89 N-Channel JFET with Diodes Features SOT353 (SC70-5) Top View InterFET N0014EU Geometry Diode Source Low Noise: 5 nV/Hz Typical 1 5 Low Leakage: 2pA Typical Gate 2 Low Ciss: 2.3pF Typical RoHS Compliant N/C Drain 3 4 SMT, TH, and Bare Die Package options. Applications TO-72 Bottom View Hearing Aids Gate 3 Mini Microphones Infrared Detector Amplifiers Drain 2 4 Diode/Case Battery Powered Amplifiers High Gain, Low-Noise Amplifiers Source 1 Replacement for IFND89 Description The -15V high gain, low noise InterFET IFND89 comes in several package options and is optimized for low power audio applications. The integrated back to back diodes offers clamping and additional gate leakage. Product Summary Parameters IFD89 Min Unit BVGSS Gate to Source Breakdown Voltage -15 V IDSS Drain to Source Saturation Current 0.05 mA V Gate to Source Cutoff Voltage -0.2 V GS(off) G Forward Transconductance 0.6 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFD89T72 Through Hole TO-72 Bulk IFD89SC5 Surface Mount SC70-5 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces IFD89SC5TR 13 Tape and Reel: Max 9,000 Pieces SC70-5 Tape and Reel IFD89COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFD89CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35101.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFD89 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -15 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 250 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -55 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFD89 Parameters Conditions Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -15 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V -0.10 nA Reverse Current Gate to Source V = 1.3V, I = 1A -0.2 -0.9 DS D VGS(OFF) V Cutoff Voltage V = 3.3V, I = 1A -0.2 -2.5 DS D Drain to Source V = 0V, V = 0.92V GS DS IDSS 50 1000 A Saturation Current (Pulsed) Gate to Diode V(BR)Gdiode IG = 10A, VDS = 0V 0.4 0.8 V Breakdown Voltage + Gate to Diode V(BR)Gdiode IG = -10A, VDS = 0V -0.4 -0.8 V Breakdown Voltage - Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFD89 Parameters Conditions Min Max Unit Drain to Source RDS(ON) VDS 0.1V, ID 100A, f = 1kHz 3000 ON Resistance Forward GFS VDS = 1.3V, VGS = 0V, f = 1kHz 0.6 2.25 mS Transconductance Ciss Input Capacitance VDS = 1.3V, VGS = 0V, f = 1MHz 5 pF Equivalent Circuit VDS = 1.3V, VGS = 0V, f = 100Hz 12 nV/ Hz en Input Noise Voltage IFD89 2 of 4 InterFET Corporation Document Number: IF35101.R00 www.InterFET.com June, 2019