Product Technical OrOrdderer Folder Support NowNow InterFET J230-1 J230, J231 N-Channel JFET Features SOT23 Top View InterFET N0016SH Geometry Low Noise: 5 nV/Hz Typical Source 1 Low Ciss: 4pF Typical RoHS Compliant Gate 3 SMT, TH, and Bare Die Package options. Drain 2 Applications Audio Amplifiers Small Signal Amplifier TO-92 Bottom View Ultrahigh Impedance Pre-Amplifier Gate 3 Description The -40V InterFET J230 and J231 are targeted for Drain 2 sensitive amplifier stages for mid-frequencies Source 1 designs. Gate leakages are typically less than 10pA at room temperatures. Product Summary Parameters J230 Min J231 Min Unit BV Gate to Source Breakdown Voltage -40 -25 V GSS IDSS Drain to Source Saturation Current 0.7 2 mA VGS(off) Gate to Source Cutoff Voltage -0.5 -1.5 V GFS Forward Transconductance 1000 1500 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging J230 J231 Through-Hole TO-92 Bulk SMPJ230 SMPJ231 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPJ230TR SMPJ231TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel J230COT J231COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack J230CFT J231CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35020.R00Product Technical OrOrdderer Folder Support NowNow InterFET J230-1 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 360 mW D P Power Derating 3.27 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) J230 J231 Parameters Conditions Min Typ Max Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -40 -40 V Breakdown Voltage Gate to Source IGSS VGS = -30V, VDS = 0V -250 -250 pA Reverse Current Gate to Source VGS(OFF) VDS = 20V, ID = 1A -0.5 -3 -1.5 -5 V Cutoff Voltage Drain to Source V = 0V, V = 20V GS DS IDSS 0.7 3 2 6 mA Saturation Current (Pulsed) Gate Operating IG VDS = 10V, ID = 500uA -2 -2 pA Current Dynamic Characteristics ( TA = 25C, Unless otherwise specified) J230 J231 Parameters Conditions Min Typ Max Min Typ Max Unit Forward GFS VDS = 20V, VGS = 0V, f = 1kHz 1000 3500 1500 4000 S Transconductance GOS Output Conductance VDS = 20V, VGS = 0V, f = 1kHz 1.5 3 S Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz 4 4 pF Reverse Transfer Crss VDS = 20V, VGS = 0V, f = 1MHz 1 1 pF Capacitance V = 10V, V = 0V, f = 10Hz 8 30 8 30 DS GS Noise Voltage nV/ Hz en V = 10V, V = 0V, f = 1kHz 2 2 DS GS J230-1 2 of 4 InterFET Corporation Document Number: IF35020.R00 www.InterFET.com June, 2019