Product Technical OrOrdderer Folder Support NowNow InterFET IFN147 IFN147 N-Channel JFET Features TO-18 Bottom View InterFET N0450H Geometry Low Noise: 1.1 nV/Hz Typical Drain 3 High Gain: 30mS Typical RoHS Compliant Gate/Case 2 SMT, TH, and Bare Die Package options. Source 1 Applications Low-Noise Audio Amplifier SOT23 Top View Replacement for Japanese 2SK147 Source 1 Description Gate 3 The -50V InterFET IFN147 is a low noise high gain replacement for the Japanese 2SK147 JFET. Gate Drain 2 leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TO-92 Bottom View Drain 3 Gate 2 Source 1 Product Summary Parameters IFN147 Min Unit BVGSS Gate to Source Breakdown Voltage -40 V I Drain to Source Saturation Current 5 mA DSS V Gate to Source Cutoff Voltage -0.3 V GS(off) GFS Forward Transconductance 20 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN147 Through-Hole TO-18 Bulk PN147 Through-Hole TO-92 Bulk SMP147 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP147TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel IFN147COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN147CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35067.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN147 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN113 Parameters Conditions Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -40 V Breakdown Voltage Gate to Source V = -30V, V = 0V, T = 25C -1 nA GS DS A IGSS Reverse Current V = -30V, V = 0V, T = 150C -1 A GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 1A -0.3 -1.2 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 5 30 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN147 Parameters Conditions Min Typ Max Unit Forward V = 10V, V = 0V, I = 5mA, DS GS DSS GFS 20 30 mS Transconductance f = 1kHz Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1kHz 75 pF Reverse Transfer C V = 10V, I = 0A, f = 1kHz 15 pF rss DS D Capacitance VDS = 10V, ID = 5mA, f = 1kHz 1 Noise Figure dB NF RG = 100 f = 100Hz 10 IFN147 2 of 5 InterFET Corporation Document Number: IF35067.R00 www.InterFET.com December, 2018