Product Technical OrOrdderer Folder Support NowNow InterFET IFNU231-2-3 IFNU231, IFNU232, IFNU233 Dual Matched N-Channel JFET Features InterFET N0016H Geometry TO-71 Bottom View Source Low Leakage: 10 pA Typical 5 Drain Low Input Capacitance: 3.5 pF Typical 6 High Input Impedance Gate 3 7 Gate Replacement for U231, U232, U233 RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications Low Noise Differential Amplifier SOIC8 Top View Differential Amplifier Wide-Band Amplifier Gate 1 8 Gate Drain 2 7 Source Description Source 3 6 Drain The -50V InterFET IFNU231, IFNU232, and Gate 4 Gate 5 IFNU233 JFETs are targeted for low noise differential amplifier designs. Gate leakages are less than 10pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFNU231 Min IFNU232 Min IFNU233 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 -50 V IDSS Drain to Source Saturation Current 0.5 0.5 0.5 mA V Gate to Source Cutoff Voltage -0.5 -0.5 -0.5 V GS(off) G Forward Transconductance 0.6 0.6 0.6 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFNU231 IFNU232 IFNU233 Through-Hole TO-71 Bulk SMPU231 SMPU232 SMPU233 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMPU231TR SMPU232TR SMPU233TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel Chip Orientated Tray IFNU231COT IFNU232COT IFNU233COT * (COT Waffle Pack) COT 70/Waffle Pack IFNU231CFT IFNU232CFT IFNU233CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35102.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFNU231-2-3 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 4.3 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFNU231, IFNU232, IFNU233 Parameters Conditions Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -50 V Breakdown Voltage Gate to Source V = -30V, V = 0V, T = 25C -100 pA GS DS A IGSS Reverse Current V = -30V, V = 0V, T = 150C -500 nA GS DS A Gate to Source VGS(OFF) VDS = 20V, ID = 1nA -0.5 -4.5 V Cutoff Voltage Gate to Source VGS VDS = 20V, ID = 200A -0.3 -4 V Voltage Drain to Source V = 20V, V = 0V DS GS IDSS 0.5 5 mA Saturation Current (Pulsed) V = 20V, I = 200A, T = 25C -50 pA DS D A IG Gate Current V = 20V, I = 200A, T = 125C -250 nA DS D A Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFNU231, IFNU232, IFNU233 Parameters Conditions Min Max Unit Forward GFS VDS = 20V, ID = 200A, f = 1kHz 0.6 1.6 mS Transconductance G Output Conductance V = 20V, I = 200A, f = 1kHz 10 S OS DS D C Input Capacitance V = 20V, V = 0V, f = 1MHz 6 pF iss DS GS Reverse Transfer Crss VDS = 20V, VGS = 0V, f = 1MHz 2 pF Capacitance Equivalent Circuit V = 20V, V = 0V, f = 100Hz 80 e DS GS nV/ Hz n Input Noise Voltage IFNU231 5 Differential Gate V V VDS = 20V, ID = 200A IFNU232 10 mV G S 1 G S 2 Source Voltage IFNU233 15 Differential Gate VDS = 20V, ID = 200A, IFNU231 1 V V G S 1 GS 2 Source Voltage with TA = -55C, TB = 25C, IFNU232 2.5 mV/C T Temperature T = 125C IFNU233 4 C IFNU231-2-3 2 of 4 InterFET Corporation Document Number: IF35102.R00 www.InterFET.com December, 2018