Product Technical OrOrdderer Folder Support NowNow InterFET U308-9 U308, U309 N-Channel JFET Features TO-52 Bottom View InterFET N0072L Geometry Gate/Case Low Noise: 2 nV/Hz Typical 3 Low Ciss: 4pF Typical Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Mixers SOT23 Top View Oscillators VHF/UHF Amplifiers Source 1 Description Gate 3 The -25V InterFET U308 and U309 are targeted for higher gain VHF amplifiers, mixers, and Drain 2 oscillators. Gate leakages are typically less than 10pA at room temperatures. TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters U308 Min U309 Min Unit BV Gate to Source Breakdown Voltage -25 -25 V GSS I Drain to Source Saturation Current 12 12 mA DSS VGS(off) Gate to Source Cutoff Voltage -1 -1 V GFS Forward Transconductance 10 10 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging U308 U309 Through-Hole TO-52 Bulk PNU308 PNU309 Through-Hole TO-92 Bulk SMPU308 SMPU309 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPU308TR SMPU309TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel U308COT U309COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack U308CFT U309CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35046.R01Product Technical OrOrdderer Folder Support NowNow InterFET U308-9 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 20 mA FG P Continuous Device Power Dissipation 500 mW D P Power Derating 4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) U308 U309 Parameters Conditions Min Typ Max Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -25 -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -150 -150 pA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 125C -150 -150 nA GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 -6 -1 -4 V Cutoff Voltage Gate to Source VGS(F) VDS = 0V, IG = 10mA 1 1 V Forward Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 12 60 12 30 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) U308 U309 Parameters Conditions Min Typ Max Min Typ Max Unit 10 17 10 17 VDS = 10V, ID = 10mA, f = 1kHz Forward G V = 10V, I = 10mA, f = 105MHz 15 15 mS FS DS D Transconductance V = 10V, I = 10mA, f = 450MHz DS D 14 14 V = 10V, I = 10mA, f = 1kHz 250 250 DS D G Output Conductance V = 10V, I = 10mA, f = 105MHz 0.18 0.18 S OS DS D VDS = 10V, ID = 10mA, f = 450MHz 0.32 0.32 VDS = 10V, ID = 10mA, f = 105MHz 14 16 14 16 G Power Gain dB PS VDS = 10V, ID = 10mA, f = 450MHz 10 11 10 11 Drain Gate C V = 10V, V = -10V, f = 1MHz 2.5 2.5 pF dg DS GS Capacitance Source Gate C V = 10V, V = -10V, f = 1MHz 5 5 pF gs DS GS Capacitance Noise Voltage VDS = 10V, ID = 10mA, f = 100kHz 10 10 nV/ Hz e n V = 10V, I = 10mA, f = 105MHz 1.5 2 1.5 2 DS D NF Noise Figure dB VDS = 10V, ID = 10mA, f = 450MHz 2.7 3.5 2.7 3.5 U308-9 2 of 5 InterFET Corporation Document Number: IF35046.R01 www.InterFET.com August, 2020