DU2860U RF Power MOSFET Transistor Rev. V1 60 W, 2 - 175 MHz, 28 V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 12 A DS Power Dissipation P 159 W D Junction Temperature T 200 C J Storage Temperature T -55 to +150 C STG Thermal Resistance 1.1 C/W JC LETTER MILLIMETERS INCHES TYPICAL DEVICE IMPEDANCE DIM MIN MAX MIN MAX F (MHz) Z () Z () IN LOAD A 24.64 24.89 .970 .980 30 9.0 - j4.0 6.0 +j0.0 B 18.29 18.54 .720 .730 50 6.0 - j5.8 5.0 + j2.0 C 25.96 26.42 1.020 1.040 100 4.0 - j4.2 4.0 + j3.0 D 12.60 12.85 .496 .506 E 6.22 6.48 .245 .255 200 1.0 - j1.0 2.0 + j1.9 F 5.59 5.84 .220 .230 V = 28V, I = 300mA, P = 60 W DD DQ OUT G 3.05 3.30 .120 .130 Z is the series equivalent input impedance of the device IN H 2.21 2.59 .087 .102 from gate to source. J 3.91 4.42 .154 .174 K 6.53 7.34 .257 .289 Z is the optimum series equivalent load impedance LOAD L .10 .15 .004 .006 as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 15.0 mA DSS GS DS Drain-Source Leakage Current I - 3.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 3.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 300.0 mA GS(TH) DS DS Forward Transconductance G 1.5 - S V = 10.0 V , I = 3.0 A , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 135 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance - 120 pF V = 28.0 V , F = 1.0 MHz C DS OSS Reverse Capacitance C - 24 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 13 - dB V = 28.0 V, I = 300 mA, P = 60.0 W F =175 MHz P DD DQ OUT Drain Efficiency 60 - % V = 28.0 V, I = 300 mA, P = 60.0 W F =175 MHz D DD DQ OUT Load Mismatch Tolerance VSWR-T - 30:1 - V = 28.0 V, I = 300 mA, P = 60.0 W F =175 MHz DD DQ OUT 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: DU2860U RF Power MOSFET Transistor Rev. V1 60 W, 2 - 175 MHz, 28 V Typical Broadband Performance Curves GAIN FREQUENCY EFFICIENCY FREQUENCY VS VS V =28 V I =300 mA P =60 W V =28 V I =300 mA P =60 W DD DQ OUT DD DQ OUT 25 80 20 70 15 60 50 10 25 50 100 150 50 100 150 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT POWER INPUT VS V =28 V I =300 mA DD DQ 80 150MHz 100MHz 60 200MHz 40 20 0 0 0.5 1 1.5 2 2.5 2.75 3 POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: