X-On Electronics has gained recognition as a prominent supplier of 2N6800 MOSFET across the USA, India, Europe, Australia, and various other global locations. 2N6800 MOSFET are a product manufactured by Microchip. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

2N6800 Microchip

2N6800 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N6800
Manufacturer: Microchip
Category: MOSFET
Description: MOSFET N Channel MOSFET
Datasheet: 2N6800 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 59.4879 ea
Line Total: USD 59.49

Availability - 0
MOQ: 1  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 25
1 : USD 59.4879
25 : USD 52.3484

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N6800 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6800 and other electronic components in the MOSFET category and beyond.

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2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: N-CHANNEL MOSFET JAN, JANTX, JANTXV Available on and JANS* commercial Qualified per MIL-PRF-19500/557 versions DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high- reliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N6796, 2N6798, 2N6800, 2N6802 Notes: 1. Derate linearly 0.2 W/C for T > +25 C. C 2. The following formula derives the maximum theoretical I limit. I is also limited by package and internal wires and may be limited due to D D pin diameter. 3. I = 4 x I as calculated in note 2. DM D1 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturers ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6796 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS level (2N6798) Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. di/dt I Forward current F R Gate drive impedance G V Drain supply voltage DD V Drain source voltage, dc DS V Gate source voltage, dc GS T4-LDS-0047, Rev. 3 (121483) 2012 Microsemi Corporation Page 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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