MIW40N65 Features Low V Fast Switching ce(sat) Trench and V with Positive Temperature Coefficient ce(sat) High Ruggedness, Good Thermal Stability Field Stop Very Tight Parameter Distribution Halogen Free IGBT Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS 650V 40A Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C TO-247 IGBT Thermal Resistance: 0.45C/W Junction to Case Diode Thermal Resistance: 1.25C/W Junction to Case C B E Thermal Resistance: 40C/W Junction to Ambient Parameter Rating Symbol Unit A Collector Emitter Voltage V 650 V CE Q 80 T =25 C (1) I A DC Collector Current C 2 1 3 T =100 40 C (2) P I 120 Pulsed Collector Current A C,pluse F T =25 40 C (1) I K A Diode Forward Current F V 20 T =100 C J (2) I 120 A Diode Pulsed Current F,pluse D GateEmitter Voltage V 20 V GE G (3) Short Circuit Withstand Time t 10 s SC V =15V, V =400V, T 150C GE CC J DIMENSIONS 280 T =25 C INCHES MM P DIM NOTE Power Dissipation W D MIN MAX MIN MAX 110 T =100 C A 0.787 0.866 20.00 22.00 Note: B 0.598 0.638 15.20 16.20 C 0.185 0.208 4.70 5.30 1. Limited by T . Jmax D 0.035 0.059 0.90 1.50 2. T limited by T . p Jmax E 0.059 0.094 1.50 2.40 3. Allowed number of short circuits: <1000 time between short circuits: >1s. F 0.067 0.091 1.70 2.30 J 0.019 0.031 0.48 0.80 Internal Structure K 0.748 0.833 19.00 21.15 P 0.122 0.189 3.10 4.80 Q 0.118 0.150 3.00 3.80 2(C) V 0.106 0.134 2.70 3.40 G 0.197 0.224 5.00 5.70 1(G) 3(E) Rev.3-1-05072020 1/5 MCCSEMI.COMMIW40N65 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector Emitter V V =0V, I =0.25mA 650 V (BR)CES GE C Breakdown Voltage V =15V, I =40A 1.9 2.4 GE C Collector Emitter V V CE(sat) Saturation Voltage V =15V, I =40A, T =150 2.4 GE C J V =0V, I =20A 1.8 GE F Diode Forward Voltage V V F V =0V, I =20A, T =150 1.6 GE F J V I =1mA, V =V G E Threshold Voltage 4 5.7 7 V GE(th) C CE GE V =650V, V =0V 0.1 CE GE I C E Leakage Current mA CES V =650V, V =0V, T =150 4 CE GE J I V =0V, V =20V G E Leakage Current 250 nA GES CE GE g V =20V, I =40A Transconductance 24 S FS CE C Dynamic Characteristics C Input Capacitance 3155 ies V =30V,V =0V,f=1MHz Output Capacitance C 175 pF CE GE oes C Reverse Transfer Capacitance 81.5 res Gate Charge Q V =400V,I =40A,V =15V 165 nC g CC C GE IGBT Switching Characteristics Turn-On Delay Time t 62 d(on) t Rise Time 54 r ns Turn-Off Delay Time t 265 d(off) V =600V, I =40A, CC C t V =0/15V, R =10, Fall Time 30 f GE G Inductive load E 3.3 Turn On Energy on E mJ Turn Off Energy 1.4 off Total Switching Energy E 4.7 ts Diode Characteristics t Reverse Recovery Time 41 ns rr V =400V, I =20A, R F Q Reverse Recovery Charge 0.31 C rr di /dt=200A/s F I Peak Reverse Recovery Current 13.3 A rrm Rev.3-1-05072020 2/5 MCCSEMI.COM