MT8HTF12864HZ-800M1 Micron

1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT8HTF12864HZ 1GB MT8HTF25664HZ 2GB Figure 1: 200-Pin SODIMM (MO-224 R/C B) Features Module height: 30mm (1.18in) 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, PC2-6400, or PC2-8500 1GB (128 Meg x 64), 2GB (256 Meg x 64) V = V 1.8V DD DDQ V = 1.73.6V DDSPD JEDEC-standard 1.8V I/O (SSTL 18-compatible) Differential data strobe (DQS, DQS ) option 4n-bit prefetch architecture Options Marking Multiple internal device banks for concurrent opera- Operating temperature tion Commercial (0C T +70C) None A Programmable CAS latency (CL) 1 Industrial (40C T +85C) I A Posted CAS additive latency (AL) Package t WRITE latency = READ latency - 1 CK 200-pin DIMM (halogen-free) Z 2 Frequency/CL Programmable burst lengths (BL): 4 or 8 1 1.875ns CL = 7 (DDR2-1066) -1GA Adjustable data-output drive strength 2.5ns CL = 5 (DDR2-800) -80E 64ms, 8192-cycle refresh 2.5ns CL = 6 (DDR2-800) -800 On-die termination (ODT) 3.0ns CL = 5 (DDR2-667) -667 Serial presence detect (SPD) with EEPROM 1. Contact Micron for industrial temperature Notes: Gold edge contacts module offerings. Single rank 2. CL = CAS (READ) latency. Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 -800 PC2-6400 800 667 533 400 15 15 60 -667 PC2-5300 667 553 400 15 15 60 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83c2a451 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf8c128 256x64hz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM Features Table 2: Addressing Parameter 1GB 2GB Refresh count 8K 8K Row address 16K A 13:0 32K A 14:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8HTF12864H(I)Z-1GA 1GB 128 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT8HTF12864H(I)Z-80E 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT8HTF12864H(I)Z-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT8HTF12864H(I)Z-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8HTF25664H(I)Z-1GA 2GB 256 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT8HTF25664H(I)Z-80E 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT8HTF25664H(I)Z-800 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT8HTF25664H(I)Z-667 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8HTF12864HZ-667M1. PDF: 09005aef83c2a451 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf8c128 256x64hz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved.