Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d V = 20 V DS Fast switching Logic level compatible I = 1.05 A D Subminiature surface mount package R 250 m (V = 2.5 V) g DS(ON) GS V 0.4 V GS(TO) s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power 3 transistor. This device has very low 1 gate Top view threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain 1 2 The BSH105 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage - 20 V DS V Drain-gate voltage R = 20 k -20 V DGR GS V Gate-source voltage - 8V GS I Drain current (DC) T = 25 C - 1.05 A D a T = 100 C - 0.67 A a I Drain current (pulse peak value) T = 25 C - 4.2 A DM a P Total power dissipation T = 25 C - 0.417 W tot a T = 100 C - 0.17 W a T , T Storage & operating temperature - 55 150 C stg j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to FR4 board, minimum 300 - K/W th j-a ambient footprint August 1998 1 Rev 1.000