15GN01CA-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA1098A 15GN01CA RF Transistor 15GN01CA Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 0.5 A CBO CB E Emitter Cutoff Current I V =2V, I =0A 0.5 A EBO EB C DC Current Gain h V =5V, I =10mA 200 400 FE CE C Gain-Bandwidth Product f V =5V, I =10mA 1.0 1.5 GHz T CE C Output Capacitance Cob V =10V, f=1MHz 1.2 1.6 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =20mA, I =2mA 0.06 0.12 V CE C B Output ON resistance Ron I =3mA, f=10kHz 2.0 B Ordering Information Device Package Shipping memo 15GN01CA-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V C CE C CE 50 10 45 9 40 8 0.20mA 35 7 30 6 0.15mA 25 5 0.10mA 20 4 15 3 0.05mA 10 2 5A 5 1 I =0mA I =0A B B 0 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Collector-to-Emitter Voltage, V -- V IT06246 Collector-to-Emitter Voltage, V -- V IT06247 CE CE I -- V h -- I C BE FE C 7 60 V =5V V =5V CE CE 50 5 40 3 30 2 20 10 0 100 0 0.2 0.4 0.6 0.8 1.0 1.2 23 5 7 23 5 7 23 5 7 1.0 10 100 Base-to-Emitter Voltage, V -- V IT06248 Collector Current, I -- mA IT05405 BE C No. A1098-2/7 30A 25A 20A 15A 10A 40A 35A 0.25mA 45 A 0.30mA Collector Current, I -- mA Collector Current, I -- mA C C DC Current Gain, h Collector Current, I -- mA FE C