X-On Electronics has gained recognition as a prominent supplier of 15GN01CA-TB-E RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 15GN01CA-TB-E RF Bipolar Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

15GN01CA-TB-E ON Semiconductor

15GN01CA-TB-E electronic component of ON Semiconductor
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See Product Specifications
Part No. 15GN01CA-TB-E
Manufacturer: ON Semiconductor
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar LOW-SATURATION VOLTAGE
Datasheet: 15GN01CA-TB-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5342
Multiples : 5342
5342 : USD 0.0763
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.3485
10 : USD 0.2539
100 : USD 0.1437
1000 : USD 0.0746
3000 : USD 0.0657
9000 : USD 0.0534
24000 : USD 0.0523
45000 : USD 0.049
99000 : USD 0.0479
N/A

Obsolete
   
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We are delighted to provide the 15GN01CA-TB-E from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 15GN01CA-TB-E and other electronic components in the RF Bipolar Transistors category and beyond.

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LOT No. LOT No. Ordering number : ENA1098A 15GN01CA RF Transistor 15GN01CA Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 0.5 A CBO CB E Emitter Cutoff Current I V =2V, I =0A 0.5 A EBO EB C DC Current Gain h V =5V, I =10mA 200 400 FE CE C Gain-Bandwidth Product f V =5V, I =10mA 1.0 1.5 GHz T CE C Output Capacitance Cob V =10V, f=1MHz 1.2 1.6 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =20mA, I =2mA 0.06 0.12 V CE C B Output ON resistance Ron I =3mA, f=10kHz 2.0 B Ordering Information Device Package Shipping memo 15GN01CA-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V C CE C CE 50 10 45 9 40 8 0.20mA 35 7 30 6 0.15mA 25 5 0.10mA 20 4 15 3 0.05mA 10 2 5A 5 1 I =0mA I =0A B B 0 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Collector-to-Emitter Voltage, V -- V IT06246 Collector-to-Emitter Voltage, V -- V IT06247 CE CE I -- V h -- I C BE FE C 7 60 V =5V V =5V CE CE 50 5 40 3 30 2 20 10 0 100 0 0.2 0.4 0.6 0.8 1.0 1.2 23 5 7 23 5 7 23 5 7 1.0 10 100 Base-to-Emitter Voltage, V -- V IT06248 Collector Current, I -- mA IT05405 BE C No. A1098-2/7 30A 25A 20A 15A 10A 40A 35A 0.25mA 45 A 0.30mA Collector Current, I -- mA Collector Current, I -- mA C C DC Current Gain, h Collector Current, I -- mA FE C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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