Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Features AECQ101 Qualified V = 1.6 V CESat Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating C High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(Sat) C 100% of the Parts are Tested for I (Note 2) LM G Fast Switching Tight Parameter Distribution E RoHS Compliant Typical Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters Totem Pole Bridgeless PFC G C MAXIMUM RATINGS E TO2473L Rating Symbol Value Unit CASE 340CX CollectortoEmitter Voltage V 650 V CES GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 MARKING DIAGRAM Collector Current (Note 1) T = 25C I 80 A C C T = 100C 75 C Pulsed Collector Current (Note 2) I 300 A LM &Y&Z&3&K Pulsed Collector Current (Note 3) I 300 A CM AFGHL 75T65SQDT Diode Forward Current T = 25C I 80 A C F 75 T 100C C = Pulsed Diode Maximum Forward Current I 300 A FM(2) Maximum Power Dissipation T = 25C P 375 W C D T = 100C 188 C &Y = ON Semiconductor Logo Operating Junction T , 55 to C J / Storage Temperature Range T +175 &Z = Assembly Plant Code STG &3 = 3Digit Data Code Maximum Lead Temp. for Soldering T 300 C L &K = 2Digit Lot Traceability Code Purposes, 1/8 from case for 5 seconds AFGHL75T65SQDT = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Value limit by bond wire 2. V = 400 V, V = 15 V, I = 300 A, R = 17 , Inductive Load CC GE C G Device Package Shipping 3. Repetitive Rating: pulse width limited by max. Junction temperature AFGHL75T65SQDT TO 247 3L 30 Units / Rail Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: November, 2019 Rev. 0 AFGHL75T65SQDT/DAFGHL75T65SQDT THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.4 C/W JC Thermal resistance junctiontocase, for Diode R 0.65 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of Breakdown V = 0 V, 0.6 V/C GE BV CES Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collectoremitter V = 20 V, I 400 nA GE GES shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 75 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 75 A, T = 175C 1.95 GE C J DYNAMIC CHARACTERISTICS V = 30 V, pF Input capacitance C 4617 CE ies V = 0 V, GE Output capacitance C 152 f = 1 MHz oes Reverse transfer capacitance C 13 res V = 400 V, nC Gate charge total Q 136 CE g I = 75 A, C Gatetoemitter charge Q 25 V = 15 V ge GE Gatetocollector charge Q 32 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 21 ns C d(on) V = 400 V, CC Rise time t 16 r I = 37.5 A, C R = 4.7 , G Turnoff delay time t 113 d(off) V = 15 V, GE Inductive Load Fall time t 8 f Turnon switching loss E 0.77 mJ on Turnoff switching loss E 0.23 off Total switching loss E 1.0 ts T = 25C, ns Turnon delay time t 24 C d(on) V = 400 V, CC Rise time t 44 I = 75 A, r C R = 4.7 , G Turnoff delay time t 106 d(off) V = 15 V, GE Inductive Load Fall time t 68 f Turnon switching loss E 2.12 mJ on Turnoff switching loss E 1.14 off Total switching loss E 3.26 ts www.onsemi.com 2