Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing. 100 A, 650 V, V = 1.6 V Features CESat AECQ101 Qualified C Very Low Saturation Voltage: V = 1.6 V (Typ.) I = 100 A CE(Sat) C Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating Tight Parameter Distribution G High Input Impedance 100% of the Parts are Tested for I LM E Short Circuit Ruggedness Copacked with Soft Fast Recovery Diode Typical Applications Traction Inverter for HEV/EV Auxiliary DC/AC Converters Motor Drives G C Other PowerTrain Applications Requiring High Power Switch E TO2473LD CASE 340CU MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM CollectortoEmitter Voltage V 650 V CES GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 Collector Current (Note 1) T = 25C I 120 A C C T = 100C 100 C Y&Z&3&K AFGY100T Pulsed Collector Current I 300 A LM 65SPD Pulsed Collector Current I 300 A CM Diode Forward Current (Note 1) T = 25C I 120 A C F T = 100C 100 C Maximum Power Dissipation T = 25C P 660 W C D T = 100C 330 C Y = ON Semiconductor Logo Short Circuit Withstand Time T = 25C SCWT 6 s C &Z = Assembly Plant Code Voltage Transient Ruggedness (Note 2) dV/dt 10 V/ns &3 = Date Code (Year & Week) &K = Lot Traceability Code Operating Junction / Storage Temperature T , T 55 to C J STG AFGY100T65SPD = Specific Device Code Range +175 Maximum Lead Temp. for Soldering T 265 C L Purposes, 1/8 from case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AFGY100T65SPD TO 247 3LD 30 Units / Tube 1. Value limit by bond wire 2. V = 400 V, V = 15 V, I = 300 A, Inductive Load CC GE C Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: July, 2020 Rev. 0 AFGY100T65SPD/DAFGY100T65SPD THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.23 C/W JC Thermal resistance junctiontocase, for Diode R 0.40 JC Thermal resistance junctiontoambient R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of V = 0 V, 0.6 V/C GE BV CES Breakdown Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 40 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collector V = 20 V, I 250 nA GE GES emitter shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 100 mA V 4.3 5.3 6.3 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 100 A V 1.6 2.05 V GE C CE(sat) V = 15 V, I = 100 A, T = 175C 2.15 GE C J DYNAMIC CHARACTERISTICS Input capacitance V = 30 V, C 4220 pF CE ies V = 0 V, GE Output capacitance C 302 f = 1 MHz oes Reverse transfer capacitance C 38 res Internal Gate Resistance f = 1 MHz R 3 G Gate charge total V = 400 V, Q 109 164 nC CE g I = 100 A, C Gatetoemitter charge Q 34 ge V = 15 V GE Gatetocollector charge Q 36 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 36 ns J d(on) V = 400 V, CC Rise time t 92 r I = 100 A, C R = 5.0 , G Turnoff delay time t 78 d(off) V = 15 V, GE Inductive Load Fall time t 106 f Turnon switching loss E 5.1 mJ on Turnoff switching loss E 2.7 off Total switching loss E 7.8 ts Turnon delay time T = 175C, t 32 ns J d(on) V = 400 V, CC Rise time t 96 I = 100 A, r C R = 5.0 , G Turnoff delay time t 84 d(off) V = 15 V, GE Inductive Load Fall time t 156 f Turnon switching loss E 7.9 mJ on Turnoff switching loss E 4.0 off Total switching loss E 11.9 ts www.onsemi.com 2