CAV24C512 2 EEPROM Serial 512-Kb I C - Automotive Grade 1 Description 2 The CAV24C512 is a EEPROM Serial 512Kb I C, internally organized as 65,536 words of 8 bits each. www.onsemi.com It features a 128byte page write buffer and supports the Standard 2 (100 kHz), Fast (400 kHz) and FastPlus (1 MHz) I C protocol. Write operations can be inhibited by taking the WP pin High (this protects the entire memory). External address pins make it possible to address up to eight SOIC8 CAV24C512 devices on the same bus. W SUFFIX UDFN8 OnChip ECC (Error Correction Code) makes the device suitable CASE 751BD HU5 SUFFIX for high reliability applications. CASE 517BU Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified 2 Supports Standard, Fast and FastPlus I C Protocol TSSOP8 WLCSP8 Y SUFFIX C8A SUFFIX 2.5 V to 5.5 V Supply Voltage Range CASE 948AL CASE 567JL 128Byte Page Write Buffer Hardware Write Protection for Entire Memory PIN CONFIGURATIONS 2 Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs Pin A1 A V Reference 0 CC (SCL and SDA) 1 A WP Low Power CMOS Technology 1 1,000,000 Program/Erase Cycles A SCL 2 SDA VCC 100 Year Data Retention V SDA SS SCL 8lead SOIC, TSSOP, UDFN and 8ball WLCSP Packages A 2 WP SOIC (W, X), TSSOP (Y), These Devices are PbFree, Halogen Free/BFR Free and are RoHS UDFN (HU5) A 1 Compliant (Top View) VSS A 0 V CC For the location of Pin 1, please consult the corresponding WLCSP (C8A) package drawing. (Top View) SCL CAV24C512 SDA PIN FUNCTION A , A , A 2 1 0 Pin Name Function WP A , A , A Device Address 0 1 2 SDA Serial Data V SCL Serial Clock SS WP Write Protect Figure 1. Functional Symbol V Power Supply CC V Ground SS This document contains information on some products that are still under development. ORDERING INFORMATION ON Semiconductor reserves the right to change or discontinue these products without See detailed ordering and shipping information in the package notice. dimensions section on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2019 Rev. 4 CAV24C512/DCAV24C512 MARKING DIAGRAMS C9L ALL YM 24512A C12A AYMXXX UDFN8 (HU5) AYMXXX C9L = Specific Device Code A = Assembly Location Code TSSOP8 (Y) LL = Assembly Lot SOIC8 (W) Y = Year M = Month 24512A = Specific Device Code C12A = Specific Device Code = PbFree Package A = Assembly Location Code A = Assembly Location Code Y = Production Year (Last Digit) Y = Production Year (Last Digit) M = Production Month (19, O, N, D) M = Production Month (19, O, N, D) C9A XXX = Last Three Digits of XXX = Last Three Digits of AYW = Assembly Lot Number = Assembly Lot Number = PbFree Microdot = PbFree Microdot WLCSP8 (C8A) C9A = Specific Device Code A = Assembly Location Y = Year W = Work Week Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified. CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz/1 MHz 1 mA CCR SCL I Write Current V = 5.5 V 2.5 mA CCW CC I Standby Current All I/O Pins at GND or V T = 40C to +125C 5 A SB CC A I I/O Pin Leakage Pin at GND or V T = 40C to +125C 2 A L CC A V Input Low Voltage 0.5 0.3 V V IL1 CC V Input High Voltage 0.7 V V + 0.5 V IH1 CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2