X-On Electronics has gained recognition as a prominent supplier of CAV24M01WE-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAV24M01WE-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAV24M01WE-GT3 ON Semiconductor

CAV24M01WE-GT3 electronic component of ON Semiconductor
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See Product Specifications
Part No.CAV24M01WE-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM Serial-I2C 1M-bit 128K x 8 3.3V/5V Automotive 8-Pin SOIC N T/R
Datasheet: CAV24M01WE-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6814 ea
Line Total: USD 1.68 
Availability - 95
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
95
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6814
10 : USD 1.4248
30 : USD 1.2831
100 : USD 1.1242
500 : USD 1.0534
1000 : USD 1.0207

   
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RoHS - XON
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We are delighted to provide the CAV24M01WE-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAV24M01WE-GT3 and other electronic components in the EEPROM category and beyond.

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CAV24M01 2 1 Mb I C CMOS Serial EEPROM Description The CAV24M01 is a 1024 kb Serial CMOS EEPROM, internally organized as 131,072 words of 8 bits each. CAV24M01 MARKING DIAGRAMS M01C AYMXXX 24M01A AYMXXX (TSSOP8) M01C = Specific Device Code (SOIC8) A = Assembly Location 24M01A = Specific Device Code Y = Production Year (Last Digit) A = Assembly Location M = Production Month (19, O, N, D) Y = Production Year (Last Digit) XXX = Last Three Digits of M = Production Month (19, O, N, D) = Assembly Lot Number XXX = Last Three Digits of = PbFree Microdot XXX = Assembly Lot Number Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Test Condition: Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specied. CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz / 1 MHz 1 mA CCR SCL I Write Current V = 5.5 V 5.0 mA CCW CC I Standby Current All I/O Pins at GND or V T = 40C to +125C 5 A SB CC A I I/O Pin Leakage Pin at GND or V T = 40C to +125C 2 A L CC A V Input Low Voltage 0.5 0.3 V V IL1 CC V Input High Voltage 0.7 V V + 0.5 V IH1 CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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