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V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS I = 7.5 A D produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 43 nC) technology has been especially tailored to reduce on-state Low C (Typ. 20 pF) rss resistance, and to provide superior switching performance and 100% Avalanche Tested high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction Fast Recovery Body Diode (Typ. 100 ns) (PFC), and electronic lamp ballasts. D G G D TO-3PN S S Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FQA13N50CF Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 15 A D C - Continuous (T = 100C) 9.5 A C I Drain Current - Pulsed (Note 1) 60 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 860 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 21.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 218 W D C - Derate above 25C 1.56 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQA13N50CF Unit R Thermal Resistance, Junction-to-Case, Max. 0.58 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W JS 40 R Thermal Resistance, Junction-to-Ambient, Max. C/W JA www.fairchildsemi.com 2007 Fairchild Semiconductor Corporation 1 FQA13N50CF Rev C2