X-On Electronics has gained recognition as a prominent supplier of NTS12120EMFST1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NTS12120EMFST1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NTS12120EMFST1G ON Semiconductor

NTS12120EMFST1G electronic component of ON Semiconductor
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Part No.NTS12120EMFST1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 12A 120V LOW LEAKAGE TRE
Datasheet: NTS12120EMFST1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 1500
3000 : USD 0.3478
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.754
10 : USD 1.0361
100 : USD 0.7819
500 : USD 0.6653
1000 : USD 0.5465
1500 : USD 0.5119
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTS12120EMFST1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTS12120EMFST1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NTS12120EMFS, NRVTS12120EMFS Very Low Leakage Trench-based Schottky Rectifier NTS12120EMFS, NRVTS12120EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 120 R Average Rectified Forward Current I 12 A F(AV) (Rated V , T = 165C) R C Peak Repetitive Forward Current, I 24 A FRM (Rated V , Square Wave, 20 kHz, T = 163C) R C NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) V V F (I = 6 A, T = 25C) 0.6 F J (I = 12 A, T = 25C) 0.735 0.83 F J (I = 6 A, T = 125C) 0.515 F J (I = 12 A, T = 125C) 0.588 0.69 F J Instantaneous Reverse Current (Note 1) I R (V = 90 V, T = 25C) 1.73 A R J (Rated dc Voltage, T = 25C) 3.75 55 A J (V = 90 V, T = 125C) 2.4 mA R J (Rated dc Voltage, T = 125C) 3.87 30 mA J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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