DATA SHEET www.onsemi.com Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE NSR0240H Schottky barrier diodes are optimized for very low forward voltage 1 2 drop and low leakage current and are used in a wide range of dcdc CATHODE ANODE converter, clamping and protection applications in portable devices. NSR0240H in a SOD 323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting MARKING reduced space requirements. DIAGRAM Features 2 SOD323 AC M Very Low Forward Voltage Drop 480 mV 100 mA CASE 477 STYLE 1 Low Reverse Current 0.2 A 25 V VR 1 250 mA of Continuous Forward Current AC = Specific Device Code Power Dissipation of 160 mW with Minimum Trace M = Date Code = PbFree Package Very High Switching Speed (Note: Microdot may be in either location) Low Capacitance CT = 4 pF NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 ORDERING INFORMATION Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Device Package Shipping Compliant NSR0240HT1G SOD323 3000 / Tape & Reel (PbFree) Typical Applications NSVR0240HT1G SOD323 3000 / Tape & Reel LCD and Keypad Backlighting (PbFree) Camera Photo Flash For information on tape and reel specifications, Buck and Boost dcdc Converters including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Reverse Voltage and Current Protection Brochure, BRD8011/D. Clamping & Protection Markets Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs and PDAs GPS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage V 40 Vdc R Forward Continuous Current (DC) I 250 mA F NonRepetitive Peak Forward Surge I 1.0 A FSM Current ESD Rating: Human Body Model ESD Class 1C Machine Model Class M2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2021 Rev. 3 NSR0240H/DNSR0240H THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 740 C/W JA Total Power Dissipation T = 25C P 160 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 460 C/W JA Total Power Dissipation T = 25C P 270 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.55 R (V = 25 V) 0.2 2.0 R (V = 40 V) 0.6 10 R Forward Voltage V mV F (I = 10 mA) 345 450 F (I = 100 mA) 480 550 F (I = 200 mA) 585 710 F Total Capacitance pF CT (V = 5.0 V, f = 1 MHz) 4.0 R Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) 3.0 F R R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + t t r p 0.1 F 0 V 10% I 90% F 750 H V R Pulse Generator 0.1 F Output 50 Output Pulse Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. IR(REC) is measured at 1 mA. Typically 0.1 X I or 0.25 X I . RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2