NSR02100HT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features Fast Switching Speed 100 VOLT SCHOTTKY Low Leakage Current BARRIER DIODE Low Forward Voltage 0.45 V I = 1 mAdc F Surface Mount Device Low Capacitance Diode NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOD323 CASE 477 These Devices are PbFree, Halogen Free/BFR Free and are RoHS STYLE 1 Compliant MAXIMUM RATINGS 1 2 CATHODE ANODE Characteristic Symbol Value Unit Total Device Dissipation FR5 Board, (Note 1) MARKING DIAGRAM P D T = 25C 200 mW A Derate above 25C 1.57 mW/C JCM Forward Current (DC) I 200 mA F 2 1 NonRepetitive Peak Forward Current, I 2 A FSM t < 10 msec p JC = Device Code Thermal Resistance R 635 C/W JA M = Date Code JunctiontoAmbient = PbFree Package Junction and Storage Temperature Range 55 C T , T J stg (Note: Microdot may be in either location) to150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR4 Minimum Pad Device Package Shipping NSR02100HT1G SOD323 3,000 / (PbFree) Tape & Reel NSVR02100HT1G SOD323 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 1 NSR02100HT1/DNSR02100HT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V R (I = 10 A) 100 R Reverse Leakage I Adc R (V = 50 V) 0.05 R Reverse Leakage I Adc R (V = 100 V) 0.15 R Forward Voltage V Vdc F (I = 1 mAdc) 0.45 F Forward Voltage V Vdc F (I = 10 mAdc) 0.57 F Forward Voltage V Vdc F (I = 100 mAdc) 0.80 F Forward Voltage V Vdc F (I = 200 mAdc) 0.95 F Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 4 10 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2