NVMFS5844NLWFT1G ON Semiconductor

NTMFS5844NL, NVMFS5844NL MOSFET Power, Single, N-Channel 60 V, 61 A, 12 m Features NTMFS5844NL, NVMFS5844NL 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 57 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 60 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.3 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 6.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 10.2 12 DS(on) GS D m V = 4.5 V I = 10 A 13 16 GS D Forward Transconductance g V = 5 V, I = 10 A 27 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1460 ISS Output Capacitance C 150 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 96 RSS Total Gate Charge Q V = 10 V, V = 48 V I = 10 A 30 G(TOT) GS DS D Total Gate Charge Q 15 G(TOT) Threshold Gate Charge Q 1.0 G(TH) nC GatetoSource Charge Q 4.0 V = 4.5 V, V = 48 V I = 10 A GS GS DS D GatetoDrain Charge Q 8.0 GD Plateau Voltage V 3.0 V GP Gate Resistance R 0.62 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 d(ON) Rise Time t 25 r V = 4.5 V, V = 48 V, GS DS ns I = 10 A, R = 2.5 D G TurnOff Delay Time t 20 d(OFF) Fall Time t 10 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.65 J Reverse Recovery Time t 19 RR Charge Time t 13 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A S Discharge Time t 6.0 b Reverse Recovery Charge Q 15 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.