TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor November 2014 TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Equivalent Circuit C Features Medium Power Linear Switching Applications B Complementary to TIP125 / TIP126 / TIP127 R1 R2 TO-220 1 E 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP120 TIP120 TO-220 3L (Single Gauge) Bulk TIP120TU TIP120 TO-220 3L (Single Gauge) Rail TIP121 TIP121 TO-220 3L (Single Gauge) Bulk TIP121TU TIP121 TO-220 3L (Single Gauge) Rail TIP122 TIP122 TO-220 3L (Single Gauge) Bulk TIP122TU TIP122 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP120 60 V Collector-Base Voltage TIP121 80 V CBO TIP122 100 TIP120 60 V Collector-Emitter Voltage TIP121 80 V CEO TIP122 100 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 5 A C I Collector Current (Pulse) 8 A CP I Base Current (DC) 120 mA B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP120 / TIP121 / TIP122 Rev. 1.1.0 TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 2 A P W C Collector Dissipation (T = 25C) 65 C Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Max. Unit TIP120 60 Collector-Emitter Sustaining V (sus) TIP121 I = 100 mA, I = 0 80 V CEO C B Voltage TIP122 100 TIP120 V = 30 V, I =00.5 CE B I Collector Cut-Off Current TIP121 V = 40 V, I = 0 0.5 mA CEO CE B TIP122 V = 50 V, I = 0 0.5 CE B TIP120 V = 60 V, I = 0 0.2 CB E I Collector Cut-Off Current TIP121 V = 80 V, I = 0 0.2 mA CBO CB E TIP122 V = 100 V, I = 0 0.2 CB E I Emitter Cut-Off Current V = 5 V, I = 0 2 mA EBO EB C V = 3 V, I = 0.5 A 1000 CE C (1) h DC Current Gain FE V = 3 V, I = 3 A 1000 CE C I = 3 A, I = 12 mA 2.0 C B (1) V (sat) Collector-Emitter Saturation Voltage V CE I = 5 A, I = 20 mA 4.0 C B (1) V (on) Base-Emitter On Voltage V = 3 V, I = 3 A 2.5 V BE CE C V = 10 V, I = 0, CB E C Output Capacitance 200 pF ob f = 0.1 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP120 / TIP121 / TIP122 Rev. 1.1.0 2