PE4251MLI-Z pSemi

Product Specification PE4251 UltraCMOS SPDT RF Switch Product Description 104000 MHz, Absorptive The PE4251 is a HaRP technology-enhanced absorptive Features single pole double throw (SPDT) RF switch for use in general HaRP technology enhanced switching applications and mobile infrastructure. This device Low insertion loss: 0.60 dB 1000 MHz offers a flexible supply voltage of 3.3/5V, single-pin or High isolation: 62 dB 1000 MHz complementary pin control inputs and 4 kV ESD tolerance. It presents a simple alternative solution to pin diode and P1dB typical: +30.5 dBm mechanical relay switches. IIP3 typical: +59 dBm Fast switching time: 150 ns Peregrines HaRP technology enhancements deliver high linearity and exceptional performance. It is an innovative Flexible supply voltage: 3.3V 10% or feature of the UltraCMOS process, providing performance 5.0V 10% supply (see Table 3) superior to GaAs with the economy and integration of Excellent ESD protection: 4000V HBM conventional CMOS. No blocking capacitors required Figure 1. Functional Diagram Single pin or complementary control inputs RFC Figure 2. Package Type RF1 RF2 ESD ESD 8-lead MSOP with exposed paddle 50 50 CMOS Control Driver V1 V2 Table 1. Target Electrical Specifications Temp = +25 C, V = 3.3V or 5.0V DD Parameter Condition Min Typ Max Unit 1 Operation frequency 10 4000 MHz 10 MHz 0.55 0.60 dB 1000 MHz 0.60 0.70 dB Insertion loss (RF1/RF2) 2000 MHz 0.75 0.85 dB 3000 MHz 0.75 0.90 dB 4000 MHz 1.0 dB 1000 MHz 61 62 dB 2000 MHz 51 53 dB Isolation (RFC to RF1/RF2) 3000 MHz 42 43 dB 4000 MHz 37 dB 1000 MHz 26 dB 2000 MHz 23 dB Return loss 3000 MHz 22 dB 4000 MHz 19 dB 2 Input 1dB compression 504000 MHz 30.5 dBm Input IP3 504000 MHz, +18 dBm per tone, 5 MHz spacing 59 dBm Switching time 50% CTRL to 10/90% RF 150 300 ns Notes: 1. Device linearity will begin to degrade below 10 MHz. 2. Absolute maximum rating of P = 27 dBm. IN Document No. DOC-18314-2 www.psemi.com 20082015 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 10 ESDPE4251 Product Specification Table 1A. Target Electrical Specifications Temp = +125 C, V = 3.3V or 5.0V DD Parameter Condition Min Typ Max Unit Operation frequency 50 4000 MHz 50 MHz 0.65 dB 1000 MHz 0.75 dB Insertion loss (RF1/RF2) 2000 MHz 0.90 dB 3000 MHz 1.05 dB 4000 MHz 1.2 dB 1000 MHz 62 dB 2000 MHz 52 dB Isolation (RFC to RF1/RF2) 3000 MHz 43 dB 4000 MHz 36 dB 1000 MHz 24 dB 2000 MHz 23 dB Return loss 3000 MHz 19 dB 4000 MHz 18 dB * Input 1dB compression 504000 MHz 30.5 dBm Input IP3 504000 MHz, +18 dBm per tone, 5 MHz spacing 57 dBm Switching time 50% CTRL to 10/90% RF 200 ns Note: * Absolute maximum rating of P = 22 dBm. IN 20082015 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-18314-2 UltraCMOS RFIC Solutions Page 2 of 10