PE42522
Product Specification
UltraCMOS SPDT RF Switch, 9 kHz26.5 GHz
Features
Figure 1 PE42522 Functional Diagram
Broad frequency support from 9 kHz to 26.5 GHz
High port to port isolation
RFC
63 dB @ 3 GHz
58 dB @ 7.5 GHz
39 dB @ 13.5 GHz
RF1 RF2
28 dB @ 20 GHz
22 dB @ 26.5 GHz
50 50
HaRP technology enhanced
Fast settling time
CMOS Control Driver
No gate and phase lag
No drift in insertion loss and phase
V1 V
SS_EXT
Improved high frequency insertion loss and return
loss performance with external matching
High ESD performance of 3.5 kV HBM on all pins
Packaging 29-lead 4 4 mm LGA
Applications
Test and measurement
Microwave backhaul
Radar
Product Description
The PE42522 is a HaRP technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity
performance and has exceptional settling time making this device ideal for many broadband wireless applica-
tions. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42522 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
2014-2015, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-12014-6 (2/2015)
www.psemi.comPE42522
UltraCMOS SPDT RF Switch
Optional External V Control
SS
For proper operation, the V control pin must be grounded or tied to the V voltage specified in Table 2.
SS_EXT SS
When the V control pin is grounded, FETs in the switch are biased with an internal negative voltage
SS_EXT
generator. For applications that require the lowest possible spur performance, V can be applied externally
SS_EXT
to bypass the internal negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 Absolute Maximum Ratings for PE42522
Parameter/Condition Min Max Unit
Supply voltage, V
0.3 5.5 V
DD
Digital input voltage, V1 0.3 3.6 V
(1)
RF input power, CW (RFCRFX)
Fig. 2, Fig. 3 dBm
9 kHz2.89 MHz
33 dBm
>2.89 MHz18 GHz
Fig. 4 dBm
>1826.5 GHz
(2)
RF input power, pulsed (RFCRFX)
Fig. 2, Fig. 3 dBm
9 kHz2.89 MHz
34 dBm
>2.89 MHz18 GHz
dBm
Fig. 4
>1826.5 GHz
(1)
RF input power into terminated ports, CW (RFX)
Fig. 2, Fig. 3 dBm
9 kHz1.39 MHz
22 dBm
>1.39 MHz18 GHz
Fig. 4 dBm
>1826.5 GHz
Storage temperature range 65 +150 C
(3)
3500 V
ESD voltage HBM, all pins
(4)
150 V
ESD voltage MM, all pins
(5)
500 V
ESD voltage CDM, all pins
Page 2 DOC-12014-6 (2/2015)
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