QPD1006 450W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations. ROHS compliant. NI-50CW Evaluation boards are available upon request. Key Features Frequency: 1.2 to 1.4 GHz 1 Output Power (P3dB) : 313 W (CW), 468 W (Pulsed) 1 Linear Gain : 17.5 dB (CW), 17.8 dB (Pulsed) 1 Typical DEFF3dB : 55% (CW), 62.2% (Pulsed) Operating Voltage: 45 V (CW), 50 V (Pulsed) Functional Block Diagram Low thermal resistance package Pulse capable Note 1: 1.3 GHz, 25 C Applications Military radar Civilian radar Part No. Description Input Output QPD1006 1.2 1.4GHz RF IMFET Matching Matching Network Network QPD1006EVB4 Evaluation Board Datasheet Rev. E, Oct 1, 2020 Subject to change without notice - 1 of 16 - www.qorvo.com QPD1006 450W, 50V, 1.2 1.4 GHz, GaN RF IMFET 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +28 +50 +55 V Gate Voltage Range, V -7 to +2 V G Drain Bias Current, IDQ 750 mA Drain Current 60 A Drain Current, I 14 A D Gate Current Range, IG See page 4. mA 4 Gate Voltage, VG 2.7 V Power Dissipation, 10% DC 496 W Power Dissipation, Pulsed 1 mS PW, PDISS 445 W 2, 3 (PD) RF Input Power, 10% DC +46 dBm 2 Power Dissipation, CW (P ) 299 W D 1 mS PW, 1.3 GHz, T = 25C Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. Notes: 2. Package base at 85 C. 3. Pulse Width = 300 uS, Duty Cycle = 30%. 1. Operation of this device outside the parameter ranges 4. To be adjusted to desired IDQ. given above may cause permanent damage. 1 RF Characterization EVB CW Performance At 1.2 GHz Parameter Min Typ Max Units Linear Gain, GLIN 17.5 dB Output Power at 3dB compression point, P 55.4 dBm 3dB Drain Efficiency at 3dB compression point, DEFF3dB 56.2 % Gain at 3dB compression point, G 14.5 dB 3dB Notes: 1. VD = +45V, IDQ = 750mA, TA = 25C 1 RF Characterization EVB CW Performance At 1.3 GHz Parameter Min Typ Max Units Linear Gain, GLIN 17.3 dB Output Power at 3dB compression point, P 54.9 dBm 3dB Drain Efficiency at 3dB compression point, DEFF 3dB 54.6 % Gain at 3dB compression point, G3dB 14.3 dB Notes: 1. VD = +45V, IDQ = 750mA, TA = 25C 1 RF Characterization EVB CW Performance At 1.4 GHz Parameter Min Typ Max Units Linear Gain, GLIN 17.5 dB Output Power at 3dB compression point, P 54.7 dBm 3dB Drain Efficiency at 3dB compression point, DEFF 49.4 % 3dB Gain at 3dB compression point, G3dB 14.5 dB Notes: 1. VD = +45V, IDQ = 750mA, TA = 25C Datasheet Rev. E, Oct 1, 2020 Subject to change without notice - 2 of 16 - www.qorvo.com