QPD1029L 1500 W, 65 V, 1.2 1.4GHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input pre- match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for radar The device can support both CW and pulsed operations. RoHS compliant Evaluation boards are available upon request. 4-lead NI-1230 Package (Eared) Key Features Frequency: 1.2 to 1.4 GHz 1 Output Power (P ) : 1500 W 3dB Functional Block Diagram 1 Linear Gain : 21.3 dB 1 Typical PAE3dB : 75% Operating Voltage: 65 V CW and Pulse capable Note 1: 1.3 GHz Load Pull Applications L-Band radar-amplifier application Ordering info Part No. Description QPD1029L 1.2 1.4 GHz Transistor (18 pcs in tray) QPD1029LEVB4 1.2 1.4 GHz Evaluation Board Datasheet Rev. B, Sep 2019 Subject to change without notice - 1 of 16- www.qorvo.com QPD1029L 1500 W, 65 V, 1.2 1.4GHz, GaN RF Input-Matched Transistor 1, 2, 3 1, 2, 3, 4 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BV 225 V DG Drain Voltage Range, VD +65 +70 V Gate Voltage Range, VG -7 to +2 V Drain Bias Current, I 1.5 A Drain Current, IDMAX 142 A DQ 4 Gate Current Range, I See pg. 12 mA Drain Current, ID 45 A G Power Dissipation, Pulsed, 3 Gate Voltage, VG 2.8 V 1728 W 2 P DISS 2,4 3 Power Dissipation (PD) 865 W RF Input Power, Pulsed, PIN 46.2 dBm Mounting Temperature 2 Power Dissipation (P ), CW 467 W 320 C D (30Seconds) Storage Temperature 65 to +150 C Notes: Notes: 1. Electrical performance is measured under conditions noted in 1. Operation of this device outside the parameter ranges given the electrical specifications table. Specifications are not above may cause permanent damage guaranteed over all recommended operating conditions 2. Pulsed, 300us PW, 10% DC, Package base at 85 C 2. Package base at 85 C 3. Pulsed, 300us PW, 10% DC, T = 25 C 3. To be adjusted to desired I DQ 4. Pulsed, 300us PW, 10% DC 1, 2 Measured Load Pull Performance 65V Power Tuned Typical Values Parameter Units Frequency, F 1.2 1.3 1.4 GHz Output Power at 3dB compression, P 60.1 60.1 59.9 dBm 3dB Drain Efficiency at 3dB compression, DEff 63.7 62.5 64.4 % 3dB Gain at 3dB compression, G 17.3 16.5 16.9 dB 3dB Notes: 1. Test conditions unless otherwise noted: T = 25 C, V = 65 V, I = 750 mA (half device) A D DQ 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. 1, 2 Measured Load Pull Performance 65V Efficiency Tuned Typical Values Parameter Units Frequency, F 1.2 1.3 1.4 GHz Output Power at 3dB compression, P 58.5 58.5 58.5 dBm 3dB Drain Efficiency at 3dB compression, D Eff 78.7 76.4 76.4 % 3dB Gain at 3dB compression, G 18.8 18.5 18.2 dB 3dB Notes: 1. Test conditions unless otherwise noted: T = 25 C, V = 65 V, I = 750 mA (half device) A D DQ 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. B, Sep 2019 Subject to change without notice - 2 of 16- www.qorvo.com